欢迎访问ic37.com |
会员登录 免费注册
发布采购

EM68C08CWAE-3H 参数 Datasheet PDF下载

EM68C08CWAE-3H图片预览
型号: EM68C08CWAE-3H
PDF下载: 下载PDF文件 查看货源
内容描述: [128M x 8 bit DDRII Synchronous DRAM (SDRAM)]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 63 页 / 512 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
 浏览型号EM68C08CWAE-3H的Datasheet PDF文件第54页浏览型号EM68C08CWAE-3H的Datasheet PDF文件第55页浏览型号EM68C08CWAE-3H的Datasheet PDF文件第56页浏览型号EM68C08CWAE-3H的Datasheet PDF文件第57页浏览型号EM68C08CWAE-3H的Datasheet PDF文件第59页浏览型号EM68C08CWAE-3H的Datasheet PDF文件第60页浏览型号EM68C08CWAE-3H的Datasheet PDF文件第61页浏览型号EM68C08CWAE-3H的Datasheet PDF文件第62页  
EtronTech  
EM68C08CWAE  
Figure 50. CKE intensive environment  
CK#  
CK  
CKE  
tCKE  
tCKE  
tCKE  
tCKE  
tXP  
tXP  
CMD  
REF  
REF  
tREFI  
NOTE: The pattern shown above can repeat over a long period of time. With this pattern, DRAM guarantees all AC and DC timing & voltage  
specifications and DLL operation with temperature and voltage drift  
Figure 51. Read to power-down entry  
T0  
T1  
T2  
Tx  
Tx+1  
Tx+2  
Tx+3  
Tx+4  
Tx+5  
Tx+6  
Tx+7  
Tx+8  
Tx+9  
CK#  
CK  
Read operation starts with a read command and  
CMD  
CKE  
RD  
CKE should be kept HIGH until the end of burst operation  
BL=4  
AL+CL  
tIS  
Q
Q
Q
Q
DQ  
DQS  
DQS#  
T0  
T1  
T2  
Tx  
Tx+1  
Tx+2  
Tx+3  
Tx+4  
Tx+5  
Tx+6  
Tx+7  
Tx+8  
Tx+9  
CK#  
CK  
CMD  
CKE  
RD  
CKE should be kept HIGH until the end of burst operation  
BL=8  
AL+CL  
tIS  
Q
Q
Q
Q
Q
Q
Q
Q
DQ  
DQS  
DQS#  
Rev. 1.3  
58  
Oct. /2015  
 复制成功!