EM68B16DVAA
EtronTech
Functional Description
This 512Mb Mobile DDR SDRAM is a high-speed CMOS, dynamic random-access memory containing
536,870,912 bits. It is internally configured as a quad-bank DRAM. Each of the 134,217,728-bit banks is
organized as 8,192 rows by 1024 columns by 16 bits. The 512Mb Mobile DDR SDRAM uses a double data rate
architecture to achieve high speed operation. EM68B16D is applied to reduce leakage and refresh currents
while achieving very high speed. The double data rate architecture is essentially a 2n-prefetch architecture, with
an interface designed to transfer two data words per clock cycle at the I/O balls. Single read or write access for
the 512Mb Mobile DDR SDRAM consists of a single 2n-bit wide, one-clock-cycle data transfer at the internal
DRAM core and two corresponding n-bit wide, one-half-clock-cycle data transfers at the I/O balls.
Read and write accesses to the Mobile DDR SDRAM are burst oriented; accesses start at a selected location
and continue for a programmed number of locations in a programmed sequence. Accesses begin with an Active
command, which is then followed by a Read or Write command. The address bits registered coincident with the
Active command are used to select the bank and row to be accessed (BA0, BA1 select the bank, A0-A12 select
the row). The address bits (BA0, BA1 select the bank, A0-A9 select the column) registered coincident with the
READ or WRITE command are used to select the starting column location for the burst access.
Note that the DLL (Delay Lock Loop) circuitry used on standard DDR devices is not included in the Mobile DDR
SDRAM. It has been omitted to save power.
Prior to normal operation, the Mobile DDR SDRAM must be initialized.
z Power-Up and Initialization
Mobile DDR SDRAMs must be powered up and initialized in a predefined manner. Operational procedures
other than those specified may result in undefined operation. To properly initialize the Mobile DDR SDRAM,
this sequence must be followed:
1. To prevent device latch-up, it is recommended that core power (VDD) and I/O power (VDDQ) be from the
same power source and be brought up simultaneously. If separate power sources are used, VDD must
lead VDDQ
.
2. Once power supply voltages are stable and CKE has been driven High, it is safe to apply the clock.
3. Once the clock is stable, a 200µs (minimum) delay is required by the Mobile DDR SDRAM prior to applying
an executable command. During this time, NOP or Deselect commands must be issued on the command
bus.
4. Issue a Precharge All command.
5. Issue NOP or Deselect commands for at least tRP time.
6. Issue an Auto Refresh command followed by NOP or Deselect commands for at least tRFC time. Issue a
second Auto Refresh command followed by NOP or Deselect commands for at least tRFC time. As part of
the individualization sequence, two Auto Refresh commands must be issued. Typically, both of these
commands are issued at this stage as described above. Alternately, the second Auto Refresh command
and NOP or Deselect sequence can be issued between steps 10 and 11.
7. Using the Mode Register Set command, load the standard Mode Register as desired.
8. Issue NOP or Deselect commands for at least tMRD time.
9. Using the Mode Register Set command, load the Extended Mode Register to the desired operating modes.
Note that the sequence in which the standard and extended mode registers are programmed is not critical.
10. Issue NOP or Deselect commands for at least tMRD time.
.
11. The Mobile DDR SDRAM has been properly initialized and is ready to receive any valid command
Etron Confidential
6
Rev. 1.0
Mar. 2009
ETRON [ ETRON TECHNOLOGY, INC. ]
