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EM68B16DVAA-6H 参数 Datasheet PDF下载

EM68B16DVAA-6H图片预览
型号: EM68B16DVAA-6H
PDF下载: 下载PDF文件 查看货源
内容描述: 32M ×16的移动DDR同步DRAM ( SDRAM ) [32M x 16 Mobile DDR Synchronous DRAM (SDRAM)]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 40 页 / 323 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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EM68B16DVAA  
EtronTech  
Data Input Mask: DM is an input mask signal for write data. Input data is masked  
when DM is sampled High along with input data during a Write access. DM is  
sampled on both edges of DQS. DM pins include dummy parasitic loading  
internally to match the DQ and DQS loading. For x16, LDM is DM for DQ0-DQ7  
and UDM is DM for DQ8-DQ15.  
LDM, UDM  
Input  
DQ0 – DQ15  
Input /  
Output  
Data I/O: The DQ0-DQ15 input and output data are synchronized with the positive  
edges of CK and  
. The I/Os are byte-maskable during Writes.  
CK  
VDD  
VSS  
Supply  
Supply  
Supply  
Power Supply: +1.8V+0.15V/-0.1V  
Ground  
VDDQ  
DQ Power: +1.8V+0.15V/-0.1V. Provide isolated power to DQs for improved noise  
immunity.  
VSSQ  
NC  
Supply  
-
DQ Ground: Provide isolated ground to DQs for improved noise immunity.  
No Connect: No internal connection, these pins suggest to be left unconnected.  
Etron Confidential  
4
Rev. 1.0  
Mar. 2009  
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