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EM68932DVKB-6H 参数 Datasheet PDF下载

EM68932DVKB-6H图片预览
型号: EM68932DVKB-6H
PDF下载: 下载PDF文件 查看货源
内容描述: 4M ×32的移动DDR同步DRAM (SDRAM)的 [4M x 32 Mobile DDR Synchronous DRAM (SDRAM)]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 40 页 / 342 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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EM68932DVKB  
EtronTech  
Figure 31. Interrupting Write to Precharge  
CK  
CK  
WRITE  
NOP  
NOP  
NOP  
PRE  
NOP  
Command  
Address  
BA a  
(or all)  
BA, Col b  
tWR  
tDQSS max  
*2  
DQS  
DQ  
DI b  
DM  
*1  
*1  
*1  
*1  
Don’t Care  
(1) DI b = Data In to column b.  
(2) An interrupted burst of 4 or 8 is shown, 2 data elements are written.  
(3) tWTR is referenced from the positive clock edge after the last desired Data in pair.  
(4) A10 is LOW with the WRITE command (Auto Precharge is disabled)  
(5) *1 = can be Don’t Care for programmed burst length of 4  
(6) *2 = for programmed burst length of 4, DQS becomes Don’t Care at this point  
Figure 32. Precharge Command  
CK  
CK  
(High)  
CKE  
CS  
RAS  
CAS  
WE  
A0-A9  
A11  
All Banks  
A10  
One Bank  
BA  
BA0,1  
Don’t Care  
BA = Bank Address  
(if A10 = L, otherwise Don’t Care)  
Etron Confidential  
37  
Rev. 1.0  
Aug. 2009  
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