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EM68932DVKB-6H 参数 Datasheet PDF下载

EM68932DVKB-6H图片预览
型号: EM68932DVKB-6H
PDF下载: 下载PDF文件 查看货源
内容描述: 4M ×32的移动DDR同步DRAM (SDRAM)的 [4M x 32 Mobile DDR Synchronous DRAM (SDRAM)]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 40 页 / 342 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
 浏览型号EM68932DVKB-6H的Datasheet PDF文件第32页浏览型号EM68932DVKB-6H的Datasheet PDF文件第33页浏览型号EM68932DVKB-6H的Datasheet PDF文件第34页浏览型号EM68932DVKB-6H的Datasheet PDF文件第35页浏览型号EM68932DVKB-6H的Datasheet PDF文件第37页浏览型号EM68932DVKB-6H的Datasheet PDF文件第38页浏览型号EM68932DVKB-6H的Datasheet PDF文件第39页浏览型号EM68932DVKB-6H的Datasheet PDF文件第40页  
EM68932DVKB  
EtronTech  
Figure 29. Interrupting Write to Read  
CK  
CK  
WRITE  
NOP  
NOP  
NOP  
READ  
NOP  
NOP  
Command  
Address  
BA, Col b  
BA, Col n  
tWTR  
tDQSS max  
CL = 3  
DQS  
DQ  
DI b  
DM  
Don’t Care  
(1) DI b = Data In to column b. DO n = Data Out from column n.  
(2) An interrupted burst of 4 is shown, 2 data elements are written.  
3 subsequent elements of Data In are applied in the programmed order following DI b.  
(3) tWTR is referenced from the positive clock edge after the last Data In pair.  
(4) A10 is LOW with the WRITE command (Auto Precharge is disabled)  
(5) The READ and WRITE commands are to the same device but not necessarily to the same bank.  
Figure 30. Non Interrupting Write to Precharge  
CK  
CK  
WRITE  
NOP  
NOP  
NOP  
NOP  
PRE  
Command  
Address  
BA a  
(or all)  
BA, Col b  
tDQSS max  
tWR  
DQS  
DQ  
DI b  
DM  
Don’t Care  
(1) DI b = Data In to column b.  
3 subsequent elements of Data In are applied in the programmed order following DI b.  
(2) A non-interrupted burst of 4 is shown.  
(3) tWR is referenced from the positive clock edge after the last Data in pair.  
(4) A10 is LOW with the WRITE command (Auto Precharge is disabled)  
Etron Confidential  
36  
Rev. 1.0  
Aug. 2009  
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