EM68932DVKB
EtronTech
Figure 29. Interrupting Write to Read
CK
CK
WRITE
NOP
NOP
NOP
READ
NOP
NOP
Command
Address
BA, Col b
BA, Col n
tWTR
tDQSS max
CL = 3
DQS
DQ
DI b
DM
Don’t Care
(1) DI b = Data In to column b. DO n = Data Out from column n.
(2) An interrupted burst of 4 is shown, 2 data elements are written.
3 subsequent elements of Data In are applied in the programmed order following DI b.
(3) tWTR is referenced from the positive clock edge after the last Data In pair.
(4) A10 is LOW with the WRITE command (Auto Precharge is disabled)
(5) The READ and WRITE commands are to the same device but not necessarily to the same bank.
Figure 30. Non Interrupting Write to Precharge
CK
CK
WRITE
NOP
NOP
NOP
NOP
PRE
Command
Address
BA a
(or all)
BA, Col b
tDQSS max
tWR
DQS
DQ
DI b
DM
Don’t Care
(1) DI b = Data In to column b.
3 subsequent elements of Data In are applied in the programmed order following DI b.
(2) A non-interrupted burst of 4 is shown.
(3) tWR is referenced from the positive clock edge after the last Data in pair.
(4) A10 is LOW with the WRITE command (Auto Precharge is disabled)
Etron Confidential
36
Rev. 1.0
Aug. 2009
ETRON [ ETRON TECHNOLOGY, INC. ]
