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EM68932DVKB-6H 参数 Datasheet PDF下载

EM68932DVKB-6H图片预览
型号: EM68932DVKB-6H
PDF下载: 下载PDF文件 查看货源
内容描述: 4M ×32的移动DDR同步DRAM (SDRAM)的 [4M x 32 Mobile DDR Synchronous DRAM (SDRAM)]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 40 页 / 342 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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EM68932DVKB  
EtronTech  
Figure 27. Random Write Cycles  
CK  
CK  
WRITE  
WRITE  
WRITE  
WRITE  
WRITE  
Command  
Address  
BA, Col b  
BA, Col x  
BA, Col n  
BA, Col a  
BA, Col g  
tDQSS max  
DQS  
DQ  
DI b  
DI b  
DI x  
DI x  
DI n  
DI n  
DI a  
DI a  
DM  
Don’t Care  
(1) DI b etc. = Data In to column b, etc. ;  
b’, etc. = the next Data In following DI b, etc. according to the programmed burst order  
(2) Programmed burst length = 2, 4, or 8 in cases shown. If burst of 4 or 8 , burst would be truncated.  
(3) Each WRITE command may be to any active bank and may be to the same or different devices.  
Figure 28. Non-Interrupting Write to Read  
CK  
CK  
WRITE  
NOP  
NOP  
NOP  
READ  
NOP  
NOP  
Command  
Address  
BA, Col b  
BA, Col n  
tWTR  
tDQSS max  
DQS  
DQ  
DI b  
DM  
Don’t Care  
(1) DI b = Data In to column b.  
3 subsequent elements of Data In are applied in the programmed order following DI b.  
(2) A non-interrupted burst of 4 is shown.  
(3) tWTR is referenced from the positive clock edge after the last Data In pair.  
(4) A10 is LOW with the WRITE command (Auto Precharge is disabled)  
(5) The READ and WRITE commands are to the same device but not necessarily to the same bank.  
Etron Confidential  
35  
Rev. 1.0  
Aug. 2009  
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