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EM68916CWQA-37H 参数 Datasheet PDF下载

EM68916CWQA-37H图片预览
型号: EM68916CWQA-37H
PDF下载: 下载PDF文件 查看货源
内容描述: 8M ×16位DDRII同步DRAM ( SDRAM ) [8M x 16 bit DDRII Synchronous DRAM (SDRAM)]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 59 页 / 1180 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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EtronTech  
EM68916CWQA  
Table 26. IDD specification parameters and test conditions  
(VDD = 1.8V ± 0.1V, TOPR = 0~85 °C)  
-25  
-3  
-37  
Parameter & Test Condition  
Symbol  
Unit  
Max.  
Operating one bank active-precharge current:  
t
CK =tCK (min), tRC = tRC (min), tRAS = tRAS(min); CKE is HIGH,  
IDD0  
90  
90  
85  
mA  
CS# is HIGH between valid commands; Address bus inputs are  
SWITCHING; Data bus inputs are SWITCHING  
Operating one bank active-read-precharge current:  
IOUT = 0mA; BL = 4, CL = CL (min), AL = 0; tCK = tCK (min),tRC =  
tRC (min), tRAS = tRAS(min), tRCD = tRCD (min);CKE is HIGH, CS# is  
HIGH between valid commands;Address bus inputs are  
switching; Data pattern is same as IDD4W  
IDD1  
115  
100  
100  
mA  
Precharge power-down current:  
All banks idle;tCK =tCK (min); CKE is LOW; Other control and IDD2P  
address bus inputs are STABLE; Data bus inputs are FLOATING  
Precharge quiet standby current:  
10  
40  
10  
40  
10  
35  
mA  
mA  
All banks idle; tCK =tCK (min); CKE is HIGH, CS# is HIGH; Other  
IDD2Q  
control and address bus inputs are STABLE; Data bus inputs are  
FLOATING  
Precharge standby current:  
All banks idle; tCK = tCK (min); CKE is HIGH, CS# is HIGH; Other  
control and address bus inputs are SWITCHING; Data bus  
IDD2N  
45  
45  
35  
mA  
inputs are SWITCHING  
Active power-down current:  
MRS(A12)=0  
35  
15  
30  
12  
30  
12  
mA  
mA  
All banks open; tCK =tCK (min); CKE is LOW; Other  
IDD3P  
control and address bus inputs are STABLE; Data  
MRS(A12)=1  
bus inputs are FLOATING  
Active standby current:  
All banks open; tCK = tCK(min), tRAS = tRAS (max), tRP = tRP (min);  
CKE is HIGH, CS# is HIGH between valid commands; Other IDD3N  
control and address bus inputs are SWITCHING; Data bus  
inputs are SWITCHING  
64  
55  
50  
mA  
mA  
Operating burst write current:  
All banks open,continuous burst writes; BL = 4, CL = CL (min),  
AL = 0; tCK= tCK (min), tRAS = tRAS (max), tRP = tRP (min); CKE is IDD4W  
HIGH, CS# is HIGH between valid commands; Address bus  
inputs are switching; Data bus inputs are switching  
Operating burst read current:  
200  
180  
170  
All banks open, continuous burst reads, IOUT = 0mA; BL = 4, CL  
= CL (min), AL = 0; tCK = tCK (min), tRAS = tRAS (max), tRP = tRP  
(min); CKE is HIGH, CS# is HIGH between valid commands;  
IDD4R  
175  
160  
150  
mA  
Address bus inputs are SWITCHING; Data bus inputs are  
SWITCHING  
Burst refresh current:  
tCK = tCK (min); refresh command at every tRFC (min) interval; CKE  
is HIGH, CS# is HIGH between valid commands; Other control IDD5B  
and address bus inputs are SWITCHING; Data bus inputs are  
SWITCHING  
180  
5
170  
5
170  
5
mA  
mA  
Self refresh current:  
CK and CK# at 0V; CKE 0.2V;Other control and address bus IDD6  
inputs are FLOATING; Data bus inputs are FLOATING  
Operating bank interleave read current:  
All bank interleaving reads, IOUT= 0mA; BL = 4, CL = CL (min),  
AL =tRCD (min) - 1 x tCK (min); tCK = tCK (min), tRC = tRC (min), tRRD  
= tRRD (min), tRCD = tRCD (min); CKE is HIGH, CS# is HIGH  
IDD7  
265  
240  
235  
mA  
between valid commands; Address bus inputs are STABLE  
during DESELECTs.Data pattern is same as IDD4R  
Etron Confidential  
25  
Rev. 1.1  
Apr. 2009  
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