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EM63A165TS-7IG 参数 Datasheet PDF下载

EM63A165TS-7IG图片预览
型号: EM63A165TS-7IG
PDF下载: 下载PDF文件 查看货源
内容描述: [16M x 16 bit Synchronous DRAM (SDRAM)]
分类和应用: 动态存储器光电二极管内存集成电路
文件页数/大小: 53 页 / 565 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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EM63A165  
EtronTech  
Write Burst Length (A9)  
This bit is used to select the write burst mode. When the A9 bit is "0", the Burst-Read-Burst-Write mode is  
selected. When the A9 bit is "1", the Burst-Read-Single-Write mode is selected.  
Table 11. Write Burst Length  
A9  
0
Write Burst Mode  
Burst-Read-Burst-Write  
Burst-Read-Single-Write  
1
Note: A10 and BA0, 1 should stay “L” during mode set cycle.  
9
No-Operation command  
(RAS# = "H", CAS# = "H", WE# = "H")  
The No-Operation command is used to perform a NOP to the SDRAM which is selected (CS# is Low).  
This prevents unwanted commands from being registered during idle or wait states.  
10 Burst Stop command  
(RAS# = "H", CAS# = "H", WE# = "L")  
The Burst Stop command is used to terminate either fixed-length or full-page bursts. This command is  
only effective in a read/write burst without the auto precharge function. The terminated read burst ends after  
a delay equal to the CAS latency (refer to the following figure). The termination of a write burst is shown in  
the following figure.  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
T8  
CLK  
Burst  
Stop  
READ A  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
COMMAND  
The burst ends after a delay equal to the CAS# Latency  
CAS# Latency=2  
DOUT A0  
DOUT A1  
DOUT A0  
DOUT A2  
DOUT A1  
DOUT A3  
DOUT A2  
t
CK2, DQ  
CAS# Latency=3  
CK3, DQ  
DOUT A3  
t
Figure 17. Termination of a Burst Read Operation  
(Burst Length 4, CAS# Latency = 2, 3)  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
T8  
CLK  
Burst  
Stop  
NOP  
WRITE A  
DIN A0  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
COMMAND  
don’t care  
DIN A1  
DIN A2  
DQ  
Figure 18. Termination of a Burst Write Operation  
(Burst Length = X)  
Rev. 2.2  
15  
Dec. /2013  
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