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EM636327Q-6 参数 Datasheet PDF下载

EM636327Q-6图片预览
型号: EM636327Q-6
PDF下载: 下载PDF文件 查看货源
内容描述: 512K ×32高速同步图形DRAM ( SGRAM ) [512K x 32 High Speed Synchronous Graphics DRAM(SGRAM)]
分类和应用: 动态存储器
文件页数/大小: 78 页 / 1387 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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EtronTech  
EM636327  
registered coincident with the Block Write command is used to mask specific column/byte  
combinations within the block. The mapping of the DQ inputs to the column/byte combinations is  
shown in following table.  
The overall Block Write mask consists of a combination of the DQM inputs, the Mask register,  
and the column/byte mask information, as shown in the following figure. The DQM and Mask  
register masking operates normally as for a Write command, with the exception that the mask  
information is applied simultaneously to all eight columns. Therefore, in a Block Write, a given bit is  
written only if a "0" is registered for the corresponding DQM input, a "1" is registered for the  
corresponding DQ signal, and the corresponding bit in the Mask register is "1".  
Block of Columns  
(selected by A3-A7 registered  
coincident with Block Write command)  
Row in Bank  
(selected by A0-A9,  
and BS registered  
coincident with BankActivate  
Command)  
Column Mask DQ0  
DQ1  
on the DQ  
inputs  
DQ2  
DQ3  
DQ4  
DQ5  
DQ6  
DQ7  
(registered  
coincident  
with Block  
Write Command  
DSF  
D Q  
DQM0  
BankActivate  
CK  
MR0  
MR 1  
MR2  
MR3  
MR4  
MR5  
MR6  
MR7  
command  
Mask Register  
(previously loaded  
from corresponding  
DQ inputs)  
Note:  
Only the lower byte is shown. The operation is identical for other bytes.  
Block-Write Masking Block Diagram  
Preliminary  
1998  
December  
12