EtronTech
EM636165-XXI
1M x 16 SDRAM
Figure 20. Byte Write Operation
(Burst Length=4, CAS# Latency=2)
T0 T 1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
tCK2
High
CKE
CS#
RAS#
CAS#
WE#
A11
A10
RAx
CAy
CAx
CAz
RAx
A0~A9
LDQM
UDQM
DQ0 - DQ7
DQ8 - DQ15
Ax0 Ax1 Ax2
DAy2
DAy1
Az1 Az2
Ax1
Ax2 Ax3
DAy0 DAy1
DAy3
Az0
Az1 Az2 Az3
Activate
Command
Bank A
Read
Command
Bank A
Write
Command
Bank A
Upper 3 Bytes
are masked
Lower Byte
is masked
Upper 3 Bytes
Read
Lower Byte
is masked
Lower Byte
is masked
are masked Command
Bank A
Preliminary
66
Rev. 1.1 Apr. 2005