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EM566168 参数 Datasheet PDF下载

EM566168图片预览
型号: EM566168
PDF下载: 下载PDF文件 查看货源
内容描述: 1M ×16的SRAM伪 [1M x 16 Pseudo SRAM]
分类和应用: 静态存储器
文件页数/大小: 12 页 / 148 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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Etr onTech
DC Characteristics
Symbol
ILI
Parameter
Input Leakage Current
Test Conditions
VIN = VSS to VDD
VIO = VSS to VDD
CE1# = VIH, CE2 = VIL or
OE# = VIH or WE# = VIL
Cycle time = Min., 100% duty
ICC1
Operating Current @ Min
Cycle Time
IIO = 0mA, CE1# = VIL,
CE2 = VIH, VIN = VIH or VIL
Cycle time = 1µs, 100% duty
ICC2
Operating Current @ Max
Cycle Time (1µs)
IIO = 0mA, CE1#
0.2V,
CE2
VDD -0.2V, VIN
0.2V
or VIN
VDD -0.2V
CE1# = VDD – 0.2V and
ISB1
Standby Current (CMOS)
CE2 = VDD – 0.2V,
Other inputs = VSS ~ VCC
ISBD
VOL
VOH
Deep Power Down
Output Low Voltage
Output High Voltage
CE2
0.2V, Other inputs =
VSS ~ VCC
IOL = 2.1mA
IOH = -1.0mA
2.4
Min.
-1
EM566168
Max.
1
Unit
µA
ILO
Output Leakage Current
-1
1
µA
25
mA
3
mA
100
µA
10
0.4
µA
V
V
Capacitance (Ta = 25°C; f = 1 MHz)
Parameter
Input capacitance
Output capacitance
Symbol
CIN
COUT
Min
Typ
Max
8
10
Unit
pF
pF
Test Conditions
VIN = GND
VOUT = GND
Notes:
These parameters are sampled and not 100% tested.
Preliminary
4
Rev 0.2
Feb. 2002