Etr onTech
Features
•
Organized as 1M words by 16 bits
•
Fast Cycle Time : 70ns
•
Standby Current : 100uA
•
Deep power-down Current : 10uA (Memory cell data
invalid)
•
Byte data control: LB# (DQ0 - 7), UB# (DQ8 - 15)
•
Compatible with low power SRAM
•
Single Power Supply Voltage : 3.0V±0.3V
•
Package Type : 48-ball FBGA, 6x8mm
EM566168
1M x 16 Pseudo SRAM
Preliminary, Rev 0.2
Apr. 2002
Pin Assignment 48-Ball BGA, Top View
1
2
3
4
5
6
A
LB#
OE#
A0
A1
A2
CE2
B
DQ8
UB#
A3
A4
CE1#
DQ0
C
DQ9
DQ10
A5
A6
DQ1
DQ2
Pin Description
Symbol
A0 – A19
DQ0 – DQ15
CE1#
CE2
OE#
WE#
LB#
UB#
V
CC
V
SS
Function
Address Inputs
Data Inputs/Outputs
Chip Enable
Deep Power Down
Output Enable
Write Control
Lower Byte Control
Upper Byte Control
Power Supply
Ground
D
VSS
DQ11
A17
A7
DQ3
VCC
E
VCC
DQ12
NC
A16
DQ4
VSS
F
DQ14
DQ13
A14
A15
DQ5
DQ6
G
DQ15
A19
A12
A13
WE#
DQ7
H
A18
A8
A9
A10
A11
NC
Overview
The EM566168 is a 16M-bit Pseudo SRAM organized as 1M words by 16 bits. It is designed with advanced
CMOS technology specified RAM featuring low power static RAM compatible function and pin configuration. This
device operates from a single power supply. Advanced circuit technology provides both high speed and low
power. It is automatically placed in low-power mode when CS1# or both UB# and LB# are asserted high or CS2
is asserted low. There are three control inputs. CS1# and CS2 are used to select the device, and output enable
(OE#) provides fast memory access. Data byte control pins (LB#,UB#) provide lower and upper byte access.
This device is well suited to various microprocessor system applications where high speed, low power and
battery backup are required. And, with a guaranteed wide operating range, the EM566168 can be used in
environments exhibiting extreme temperature conditions.
Pin Location
Symbol
A0
A1
A2
A3
A4
A5
A6
A7
Location
A3
A4
A5
B3
B4
C3
C4
D4
Symbol
A8
A9
A10
A11
A12
A13
A14
A15
Location
H2
H3
H4
H5
G3
G4
F3
F4
Symbol
A16
A17
A18
A19
NC
DQ0
DQ1
DQ2
Location
E4
D3
H1
G2
H6
B6
C5
C6
Symbol
DQ3
DQ4
DQ5
DQ6
DQ7
DQ8
DQ9
DQ10
Location
D5
E5
F5
F6
G6
B1
C1
C2
Symbol
DQ11
DQ12
DQ13
DQ14
DQ15
CE1#
CE2
OE#
Location
D2
E2
F2
F1
G1
B5
A6
A2
Symbol
WE#
LB#
UB#
VCC
VCC
GND
GND
NC
Location
G5
A1
B2
D6
E1
D1
E6
E3
Etron Technology, Inc.
No. 6, Technology Rd. V, Science-Based Industrial Park, Hsinchu, Taiwan 30077, R.O.C.
TEL: (886)-3-5782345
FAX: (886)-3-5778671
Etron Technology, Inc., reserves the right to make changes to its products and specifications without notice.
ETRON [ ETRON TECHNOLOGY, INC. ]
