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M52S128168A-7.5BG 参数 Datasheet PDF下载

M52S128168A-7.5BG图片预览
型号: M52S128168A-7.5BG
PDF下载: 下载PDF文件 查看货源
内容描述: 1M ×16位×4银行同步DRAM [1M x 16 Bit x 4 Banks Synchronous DRAM]
分类和应用: 存储内存集成电路动态存储器
文件页数/大小: 47 页 / 1192 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
Preliminary  
M52S128168A  
BA1BA0 A11 A10 A9 A8 A7  
A6  
DS  
A5 A4  
A3  
0
A2 A1 A0 Address bus  
PASR Extended Mode Register Set  
1
0
0
0
0
0
0
0
A2-A0  
000  
WT=0  
4Bank  
001  
2 Bank (BankA& BankB) or  
(BA1=0)  
1 Bank (BankA) or  
PASR  
010  
(BA0=BA1=0)  
011  
100  
101  
111  
R
R
R
R
A6-A5  
00  
01  
10  
11  
Driver Strength  
Full Strength  
1/2 Strength  
1/4 Strength  
R
DS  
Remark R : Reserved  
EXTENDED MODE REGISTER SET (EMRS)  
The extended mode register stores for selecting PASR;TCSR;DS. The extended mode register set must be done before any active  
command after the power up sequence. The extended mode register is written by asserting low on CS,RAS,CAS,WE and high on  
BA1,low on BA0(The SDRAM should be in all bank precharge with CKE already high prior to writing into the extended more  
register). The state of address pins  
A0~An in the same cycle as CS,RAS,CAS,WE going low is written in the extended mode register. Refer to the table for specific  
codes.  
The extended mode register can be changed by using the same command and clock cycle requirements during operations as long  
as all banks are in the idle state. The default value extended mode register is defined as half driving strength and all banks  
refreshed.  
Elite Semiconductor Memory Technology Inc.  
Publication Date: May. 2007  
Revision: 1.0 10/47  
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