ESMT
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Voltage on any pin relative to V
SS
Voltage on V
DD
supply relative to V
SS
Operation ambient temperature
Storage temperature
Power dissipation
Short circuit current
Note:
SYMBOL
V
IN
, V
OUT
V
DD
, V
DDQ
T
A
T
STG
P
D
I
OS
M52D128168A (2E)
VALUE
-1.0 ~ 2.6
-1.0 ~ 2.6
0 ~ +70
-55 ~ +150
1
50
UNIT
V
V
°
C
°
C
W
mA
Permanent device damage may occur if ABSOLUTE MAXIMUM RATING are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC OPERATING CONDITION
Recommended operating conditions (Voltage referenced to V
SS
= 0V)
PARAMETER
Supply voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
SYMBOL
V
DD
, V
DDQ
V
IH
V
IL
V
OH
V
OL
I
IL
MIN
1.7
0.8 x V
DDQ
-0.3
V
DDQ
-0.2
-
-2
TYP
1.8
1.8
0
-
-
-
MAX
1.95
V
DDQ
+0.3
0.3
-
0.2
2
UNIT
V
V
V
V
V
NOTE
1
2
3
I
OH
= -0.1mA
I
OL
= 0.1mA
4
μ
A
Note:
1. under all conditions, V
DDQ
must be less than or equal to V
DD
.
2. V
IH
(max) = 2.2V. The overshoot voltage duration is
≤
3ns.
3. V
IL
(min) = -1.0V. The undershoot voltage duration is
≤
3ns.
4. Any input 0V
≤
V
IN
≤
V
DDQ
.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with tri-state outputs.
CAPACITANCE
(V
DD
= 1.8V, T
A
= 25
°
C , f = 1MHz)
PARAMETER
Input capacitance (A0 ~ A11, BA0 ~ BA1)
Input capacitance
(CLK, CKE, CS , RAS , CAS ,
WE
&
L(U)DQM)
Data input/output capacitance (DQ0 ~ DQ15)
C
IN2
2
4
pF
SYMBOL
C
IN1
MIN
2
MAX
4
UNIT
pF
C
OUT
3
5
pF
Elite Semiconductor Memory Technology Inc.
Publication Date: Aug. 2012
Revision: 1.0
3/47
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
