M32L1632512A
PIN DESCRIPTION
PIN
NAME
System Clock
INPUT FUNCTION
CLK
CS
Active on the positive going edge to sample all inputs
Disables or enable device operation by masking or enabling all
inputs except CLK, CKE and DQMi
Chip Select
Masks system clock to freeze operation from the next clock cycle.
CKE
Clock Enable
Address
CKE should be enabled at least one clock+ ss prior to new
command.
Disable input buffers for power down in standby.
t
Row / column addresses are multiplexed on the same pins.
Row address : RA0~RA9, column address : CA0~CA7
A0 ~ A9
A10(BA)
RAS
Selects bank to be activated during row address latch time.
Selects bank for read / write during column address latch time.
Bank Select Address
Row Address Strobe
Latches row addresses on the positive going edge of the CLK with
RAS low.
Enables row access & precharge.
Latches column address on the positive going edge of the CLK
With
Column Address Strobe
CAS
CAS low.
Enables column access.
Write Enable
Enables write operation and Row precharge.
WE
Makes data output Hi-Z, SHZ after the clock and masks the output.
t
DQMi
Data Input/Output Mask
Blocks data input when DQM active. (Byte Masking)
Data inputs/outputs are multiplexed on the same pins.
Enables write per bit, block write and special mode register set.
DQi
Data Input/Output
DSF
Define Special/ Function
Power Supply/ Ground
Data Output Power/Ground
VDD/VSS
VDDQ/VSSQ
ABSOLUTE MAXIMUM RATINGS (Voltage referenced to VSS)
Parameter
Voltage on any pin relative to VSS
Voltage on VDD supply relative to VSS
Storage temperature
Symbol
VIN, VOUT
VDD, VDDQ
TSTG
Value
-1.0 ~ 4.6
-1.0 ~ 4.6
-55 ~ +150
1
Unit
V
V
i
Power dissipation
PD
W
mA
Short circuit current
IOS
50
Note : Permanent device damage may occur if “ABSOLUTE MAXIMUM RATINGS” are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device
reliability.
Elite Semiconductor Memory Technology Inc.
Publication Date : Jun. 2001
Revision : 1.6 3/54
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
