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M32L1632512A-7Q 参数 Datasheet PDF下载

M32L1632512A-7Q图片预览
型号: M32L1632512A-7Q
PDF下载: 下载PDF文件 查看货源
内容描述: [Synchronous DRAM, 512KX32, 6ns, CMOS, PQFP100,]
分类和应用: 时钟动态存储器内存集成电路
文件页数/大小: 54 页 / 877 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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M32L1632512A  
DEVICE OPERATIONS (Continued)  
Timing Diagram to Illustrate tBWC  
to be coupled into the internal color register. The  
color register provides the data masked by the DQ  
column select, WPB mask (if enable), and DQM  
byte mask. Column data masking (Pixel masking) is  
provided on an individual column basis for each  
byte of data. The column mask is driven on the DQ  
pins during a block write command. The DQ  
column mask function is segmented on a per bit  
basis (i.e. DQ [0:7] provided the column mask for  
data bits [0:7], DQ [8:15] provided the column mask  
for data bits [8:15], DQ0 masks column [0] for data  
bits[0:7], DQ9 masks column [1] for data bits[8:15],  
etc). Block writes are always non-burst independent  
of the burst length that has been programmed into to  
the mode register. If write per bit was enabled by the  
bank active command with DSF=1, then write per  
bit masking of the color register data is enabled.  
If write per bit was disabled by a bank active  
command with DSF=0, the write per bit masking of  
the color register data is disabled. DQM masking  
provides independent data byte masking during  
normal write operations, except that the control is  
extended to the consecutive 8 columns of the block  
write.  
1. 2CLK Cycle Block Write  
C L O C K  
H IG H  
C K E  
C S  
R A S  
C A S  
W E  
D S F  
2
C L K B W  
Elite Semiconductor Memory Technology Inc.  
Publication Date : Jun. 2001  
Revision : 1.6 18/54  
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