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M24L416256DA-55BEG 参数 Datasheet PDF下载

M24L416256DA-55BEG图片预览
型号: M24L416256DA-55BEG
PDF下载: 下载PDF文件 查看货源
内容描述: 4兆位( 256K ×16 )伪静态RAM [4-Mbit (256K x 16) Pseudo Static RAM]
分类和应用: 存储内存集成电路静态存储器
文件页数/大小: 15 页 / 313 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
M24L416256DA  
Switching Characteristics (Over the Operating Range)[10] (continued)  
–55  
–60  
–70  
Prameter  
tPWE  
Description  
WE Pulse Width  
Unit  
Min.  
Max.  
Min.  
Max.  
Min.  
Max.  
40  
40  
45  
ns  
ns  
tBW  
50  
50  
55  
BLE /BHE LOW to Write End  
Data Set-up to Write End  
Data Hold from Write End  
tSD  
25  
0
25  
0
25  
0
ns  
ns  
ns  
tHD  
tHZWE  
25  
25  
25  
WE LOW to High Z[11, 12]  
WE HIGH to Low Z[11, 12]  
tLZWE  
5
5
5
ns  
Switching Waveforms  
Read Cycle 1 (Address Transition Controlled)[14, 15, 16]  
Read Cycle 2 (OE Controlled)[14, 16]  
Notes:  
15.Device is continuously selected. OE , CE = VIL.  
16. WE is HIGH for Read Cycle.  
Elite Semiconductor Memory Technology Inc.  
Publication Date: Jul. 2008  
Revision: 1.5 6/15  
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