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M24L416256DA-55BEG 参数 Datasheet PDF下载

M24L416256DA-55BEG图片预览
型号: M24L416256DA-55BEG
PDF下载: 下载PDF文件 查看货源
内容描述: 4兆位( 256K ×16 )伪静态RAM [4-Mbit (256K x 16) Pseudo Static RAM]
分类和应用: 存储内存集成电路静态存储器
文件页数/大小: 15 页 / 313 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
M24L416256DA  
Product Portfolio  
Power Dissipation  
Operating, ICC (mA)  
f = 1 MHz f = fMAX  
Typ.[2] Typ.[2]  
VCC Range(V)  
Speed  
(ns)  
Product  
Standby, ISB2 (µA)  
Min.  
Typ.  
3.0  
Max.  
3.6  
Max.  
Max.  
22  
Typ.[2]  
17  
Max.  
40  
55  
60  
70  
14  
8
M24L416256DA  
Notes:  
2.7  
1
5
15  
2.Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC (typ)  
and TA = 25°C.  
3.Ball H1, G2, H6 are the address expansion pins for the 8-Mb, 16-Mb, and 32-Mb densities, respectively.  
4.NC “no connect”—not connected internally to the die.  
5.DNU (Do Not Use) pins have to be left floating or tied to VSS to ensure proper application.  
Elite Semiconductor Memory Technology Inc.  
Publication Date: Jul. 2008  
Revision: 1.5 3/15  
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