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M24L416256DA-55BEG 参数 Datasheet PDF下载

M24L416256DA-55BEG图片预览
型号: M24L416256DA-55BEG
PDF下载: 下载PDF文件 查看货源
内容描述: 4兆位( 256K ×16 )伪静态RAM [4-Mbit (256K x 16) Pseudo Static RAM]
分类和应用: 存储内存集成电路静态存储器
文件页数/大小: 15 页 / 313 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
M24L416256DA  
Maximum Ratings  
(Above which the useful life may be impaired. For user  
guide-lines, not tested.)  
Latch-up Current ....................................................> 200 mA  
Storage Temperature .................................–65°C to +150°C  
Ambient Temperature with  
Power Applied ..............................................–55°C to +125°C  
Supply Voltage to Ground Potential ................0.4V to 4.6V  
DC Voltage Applied to Outputs  
Operating Range  
Range  
Ambient Temperature (TA) VCC  
in High-Z State[6, 7, 8] .......................................0.4V to 3.7V  
DC Input Voltage[6, 7, 8] ....................................0.4V to 3.7V  
Output Current into Outputs (LOW) ............................20 mA  
Static Discharge Voltage ......................................... > 2001V  
(per MIL-STD-883, Method 3015)  
Extended  
Industrial  
25°C to +85°C  
40°C to +85°C  
2.7V to 3.6V  
2.7V to 3.6V  
DC Electrical Characteristics (Over the Operating Range)  
-55, 60, 70  
Typ.[2]  
3.0  
Parameter  
Description  
Test Conditions  
Unit  
Min.  
Max.  
VCC  
VOH  
Supply Voltage  
Output HIGH  
Voltage  
2.7  
3.6  
V
V
IOH = 0.1 mA  
VCC – 0.4  
Output LOW  
Voltage  
Input HIGH  
Voltage  
Input LOW  
Voltage  
Input Leakage  
Current  
VOL  
VIH  
VIL  
IIX  
IOL = 0.1 mA  
0.4  
V
0.8 * VCC  
VCC + 0.4  
0.62  
+1  
V
V
F = 0  
-0.4  
-1  
GND VIN Vcc  
µA  
µA  
Output Leakage  
Current  
GND VOUT Vcc, Output  
Disabled  
IOZ  
-1  
+1  
14 for –55  
14 for –60  
08 for –70  
22 for –55  
22 for –60  
15 for –70  
V
I
CC = 3.6V,  
OUT = 0 mA,  
CMOS level  
f = fMAX = 1/tRC  
f = 1 MHz  
VCC Operating  
Supply Current  
ICC  
mA  
µA  
µA  
1 for all speeds 5 for all speeds  
CE1 VCC 0.2V, CE2 ≤  
0.2V, VIN VCC 0.2V, VIN  
0.2V, f = fMAX(Address and Data  
Only),f = 0 ( OE , WE ,BHE and  
BLE )  
Automatic CE1  
Power-down  
Current —CMOS  
Inputs  
ISB1  
150  
250  
40  
Automatic CE1  
Power-down  
Current —CMOS  
Inputs  
CE1 VCC 0.2V, CE2 ≤  
0.2V, VIN VCC 0.2V or VIN  
0.2V, f = 0, VCC = 3.6V  
ISB2  
17  
Capacitance[9]  
Parameter  
CIN  
Description  
Test Conditions  
TA = 25°C, f = 1 MHz  
CC = VCC(typ)  
Max.  
Unit  
Input Capacitance  
Output Capacitance  
8
8
pF  
pF  
V
COUT  
Thermal Resistance[9]  
Parameter  
θJA  
Description  
Thermal Resistance (Junction to Ambient)  
Test Conditions  
VFBGA  
Unit  
Test conditions follow standard test  
methods and procedures for measuring  
thermal impedance, per EIA/JESD51.  
°C/W  
55  
θJC  
°C/W  
Thermal Resistance (Junction to Case)  
17  
Notes:  
6.VIH(MAX) = VCC + 0.5V for pulse durations less than 20 ns.  
7.VIL(MIN) = –0.5V for pulse durations less than 20 ns.  
8.Overshoot and undershoot specifications are characterized and are not 100% tested.  
9.Tested initially and after design or process changes that may affect these parameters.  
Elite Semiconductor Memory Technology Inc.  
Publication Date: Jul. 2008  
Revision: 1.5 4/15  
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