ESMT
Pin Configuration[2, 3]
48-ball VFBGA
Top View
M24D16161DA
Product Portfolio[4]
Power Dissipation
Product
Min.
M24D16161DA
1.7
V
CC
Range (V)
Typ.[4]
1.8
Max
1.95
Speed(ns)
Operating I
CC
(mA)
f = 1MHz
f = fmax
.Typ.[4] Max.
.Typ.[4]
Max
3
5
18
20
Standby I
SB2
(µA)
.Typ. [4]
55
Max
70
70
Power-up Characteristics
The initialization sequence is shown in the figure below. Chip
Select should be OE1 HIGH or CE2 LOW for at least 200 µs
after V
CC
has reached a stable value. No access must be
attempted during this period of 200 µs.
Parameter
T
PU
Description
Chip Enable Low After Stable V
CC
Min.
200
Max.
Unit
µs
Notes:
2.Ball H6 and E3 can be used to upgrade to a 32-Mbit and a 64-Mbit density, respectively.
3.NC “no connect”-not connected internally to the die.
4.Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
CC
= V
CC (typ)
and T
A
= 25°C. Tested initially and after design changes that may affect the parameters.
Elite Semiconductor Memory Technology Inc.
Publication Date
:
Jul. 2007
Revision
:
1.0
3/12
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
