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M14D5121632A-3BIG 参数 Datasheet PDF下载

M14D5121632A-3BIG图片预览
型号: M14D5121632A-3BIG
PDF下载: 下载PDF文件 查看货源
内容描述: 8M ×16位×4银行DDR II SDRAM [8M x 16 Bit x 4 Banks DDR II SDRAM]
分类和应用: 存储内存集成电路动态存储器双倍数据速率
文件页数/大小: 59 页 / 982 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT
AC Operation Conditions & Timing Specification
AC Operation Conditions
Parameter
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
Input Differential Voltage
Input Crossing Point Voltage
Output Crossing Point Voltage
Symbol
V
IH
(AC)
V
IL
(AC)
V
ID
(AC)
V
IX
(AC)
V
OX
(AC)
0.5
0.5 x V
DDQ
- 0.175
0.5 x V
DDQ
- 0.125
-3
Min.
V
REF
+ 0.2
V
REF
- 0.2
V
DDQ
+0.6
0.5 x V
DDQ
+ 0.175
0.5 x V
DDQ
+ 0.125
Max.
Unit
V
V
V
V
V
1
2
2
M14D5121632A
Operation Temperature Condition (T
C
) -40
°
C~95
°
C
Note
Note:
1. V
ID
(AC) specifies the input differential voltage |V
TR
– V
CP
| required for switching, where V
TR
is the true input signal (such
as CLK,DQS) and V
CP
is the complementary input signal (such as CLK ,
). The minimum value is equal to V
IH
(AC) –
V
IL
(AC).
2. The typical value of V
IX
/ V
OX
(AC) is expected to be about 0.5 x V
DDQ
of the transmitting device and V
IX
/ V
OX
(AC) is
expected to track variations in V
DDQ
. V
IX
/ V
OX
(AC) indicates the voltage at which differential input / output signals must
cross.
Input / Output Capacitance
Parameter
Input capacitance
(A0~A12, BA0~BA1, CKE, CS , RAS , CAS ,
WE
, ODT)
Input capacitance (CLK, CLK )
DQS,
& Data input/output capacitance
-3
-3
Symbol
C
IN1
C
IN2
C
I / O
Min.
1.0
1.0
2.5
Max.
2.0
2.0
3.5
Unit Note
pF
pF
pF
1
1
2
Input capacitance (DM)
Note:
1. Capacitance delta is 0.25 pF.
2. Capacitance delta is 0.5 pF.
-3
C
IN3
2.5
3.5
pF
2
Elite Semiconductor Memory Technology Inc.
Publication Date : Feb. 2009
Revision : 1.1
8/59