ESMT
M14D5121632A
Operation Temperature Condition (TC) -40°C~95°C
-3
Unit
Note
Parameter
Symbol
Min.
Max.
Active to Precharge command
tRAS
tRC
45
70K
ns
ns
Active to Active command
(same bank)
60
-
Auto Refresh row cycle time
Active to Read, Write delay
Precharge command period
tRFC
tRCD
tRP
105
15
-
-
-
ns
ns
ns
15
Active bank A to Active bank B
command
tRRD
tWR
7.5
15
-
-
-
ns
ns
ns
Write recovery time
Write data in to Read command
delay
tWTR
7.5
Col. address to Col. address
delay
tCCD
tRAP
2
-
-
tCK
ns
Active to Auto Precharge delay
t
RCD(min.)
Average periodic Refresh
interval ( -40 ℃ ≦TC ≦ +85
℃ )
tREFI
-
-
7.8
3.9
us
us
Average periodic Refresh
interval (+85℃ ＜TC ≦ +95℃)
tREFI
Write preamble
tWPRE
tWPST
tRPRE
tRPST
0.35
0.4
-
t
t
t
t
CK (avg)
CK (avg)
CK (avg)
CK (avg)
Write postamble
0.6
1.1
0.6
DQS Read preamble
DQS Read postamble
0.9
11
12
0.4
Load Mode Register / Extended
Mode Register cycle time
tMRD
tDAL
2
-
-
-
-
-
-
-
tCK
tCK
ns
Auto Precharge write recovery
+ Precharge time
WR+RU(tWR / tCK
+(tRP / tCK (avg))
)
1
Internal Read to Precharge
command delay
tRTP
7.5
Exit Self Refresh to Read
command
tXSRD
tXSNR
tXP
200
tCK
ns
Exit Self Refresh to non-Read
command
t
RFC + 10
Exit Precharge Power-Down to
any non-Read command
2
2
tCK
tCK
Exit Active Power-Down to
Read command
tXARD
3
Exit active power-down to Read
command
tXARDS
7 - AL
3
-
-
tCK
2,3
(slow exit / low power mode)
CKE minimum pulse width
(high and low pulse width)
tCKE
tCK
Elite Semiconductor Memory Technology Inc.
Publication Date : Feb. 2009
Revision : 1.1 12/59
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
