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M13S64164A-5TIG 参数 Datasheet PDF下载

M13S64164A-5TIG图片预览
型号: M13S64164A-5TIG
PDF下载: 下载PDF文件 查看货源
内容描述: 1M ×16位×4银行双倍数据速率SDRAM [1M x 16 Bit x 4 Banks Double Data Rate SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 49 页 / 1546 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
M13S64164A  
Operation Temperature Condition -40°C~85°C  
Read With Auto Precharge  
If a read with auto-precharge command is initiated, the DDR SDRAM automatically enters the precharge operation BL/2 clock  
later from a read with auto-precharge command when tRAS(min) is satisfied. If not, the start point of precharge operation will be  
delayed until tRAS(min) is satisfied. Once the precharge operation has started the bank cannot be reactivated and the new  
command can not be asserted until the precharge time (tRP) has been satisfied  
<Burst Length = 4, CAS Latency = 3>  
0
1
2
3
4
5
6
7
8
C L K  
C L K  
C OMMAND  
R
ea d  
A
B a n k  
A
N OP  
N OP  
N OP  
N OP  
N OP  
N OP  
N OP  
Auto Pre cha rg e  
A CT I V E  
t R A P  
D QS  
C A S L a t e n cy = 3  
Dout  
0
Dout 2 Dout 3  
1
D Q' s  
Dout  
At burst read / write with auto precharge, CAS interrupt of the same bank is illegal.  
Elite Semiconductor Memory Technology Inc.  
Publication Date : Mar. 2009  
Revision : 1.0 24/49  
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