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M13S64164A-5TIG 参数 Datasheet PDF下载

M13S64164A-5TIG图片预览
型号: M13S64164A-5TIG
PDF下载: 下载PDF文件 查看货源
内容描述: 1M ×16位×4银行双倍数据速率SDRAM [1M x 16 Bit x 4 Banks Double Data Rate SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 49 页 / 1546 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
M13S64164A  
Operation Temperature Condition -40°C~85°C  
Functional Truth Table.  
Current  
Address  
Command  
DESEL  
Action  
CS RAS CAS WE  
H
L
L
L
L
L
L
L
H
L
L
X
H
H
H
L
X
H
H
L
X
H
L
X
NOP  
X
NOP  
NOP  
BA  
Burst Stop  
READ / WRITE  
Active  
ILLEGAL*2  
ILLEGAL*2  
X
H
L
BA, CA, A10  
IDLE  
H
H
L
BA, RA  
Bank Active, Latch RA  
NOP*4  
L
BA, A10  
PRE / PREA  
Refresh  
MRS  
L
H
L
X
AUTO-Refresh*5  
Mode Register Set*5  
NOP  
L
L
Op-Code Mode-Add  
X
H
H
X
H
H
X
H
L
X
DESEL  
X
NOP  
NOP  
BA  
Burst Stop  
NOP  
Begin Read, Latch CA,  
Determine Auto -precharge  
L
L
H
H
L
L
H
L
BA, CA, A10  
BA, CA, A10  
READ / READA  
ROW ACTIVE  
Begin Write, Latch CA,  
Determine Auto -precharge  
WRITE / WRITEA  
L
L
L
L
H
L
L
L
L
H
H
L
H
L
BA, RA  
Active  
Bank Active/ILLEGAL*2  
Precharge/Precharge All  
ILLEGAL  
BA, A10  
PRE / PREA  
Refresh  
MRS  
L
H
L
X
L
L
Op-Code Mode-Add  
ILLEGAL  
X
H
H
X
H
H
X
H
L
X
DESEL  
NOP  
NOP (Continue Burst to END)  
NOP (Continue Burst to END)  
Terminate Burst  
X
BA  
Burst Stop  
Terminate Burst, Latch CA,  
Begin New Read, Determine  
Auto-Precharge*3  
L
H
L
H
BA, CA, A10  
READ / READA  
READ  
L
L
L
L
L
H
L
L
L
L
L
H
H
L
L
H
L
BA, CA, A10  
BA, RA  
WRITE / WRITEA  
Active  
ILLEGAL  
Bank Active/ILLEGAL*2  
Terminate Burst, Precharge  
ILLEGAL  
BA, A10  
PRE / PREA  
Refresh  
H
L
X
L
Op-Code Mode-Add  
MRS  
ILLEGAL  
Elite Semiconductor Memory Technology Inc.  
Publication Date : Mar. 2009  
Revision : 1.0  
27/49  
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