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M13S64164A-5TIG 参数 Datasheet PDF下载

M13S64164A-5TIG图片预览
型号: M13S64164A-5TIG
PDF下载: 下载PDF文件 查看货源
内容描述: 1M ×16位×4银行双倍数据速率SDRAM [1M x 16 Bit x 4 Banks Double Data Rate SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 49 页 / 1546 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
M13S64164A  
Operation Temperature Condition -40°C~85°C  
Write Interrupted by a Read & DM  
A burst write can be interrupted by a read command of any bank. The DQ’s must be in the high impedance state at least one  
clock cycle before the interrupting read data appear on the outputs to avoid data contention. When the read command is registered,  
any residual data from the burst write cycle must be masked by DM. The delay from the last data to read command (tWTR) is  
required to avoid the data contention DRAM inside. Data that are presented on the DQ pins before the read command is initiated  
will actually be written to the memory. Read command interrupting write can not be issued at the next clock edge of that of write  
command.  
<Burst Length = 8, CAS Latency = 3>  
0
1
2
3
4
5
6
7
8
C L K  
C L K  
Read  
NO P  
W R I T E  
NO P  
NO P  
NO P  
NO P  
NO P  
C O M M A N D  
NO P  
t W T R  
t D Q S S m a x  
DQ S  
tW P R E S  
C A S L a t e n c y = 3  
Dou
Dout 0  
D i n  
2
D i n  
0
1
D i n  
4
D i n 7  
6
D i n  
3
D i n  
5
D i n  
D i n  
D Q ' s  
DQ S  
t W T R  
t D Q S S m i n  
tW P R E S  
C A S L a t e n c y = 3  
Dout  
0
Dou
D i n  
0
D i n  
2
D i n  
3
D i n  
5
D i n  
6
D i n 7  
D i n  
1
D i n  
4
D Q ' s  
D M  
The following functionality established how a Read command may interrupt a Write burst and which input data is not written into  
the memory.  
1. For Read commands interrupting a Write burst, the minimum Write to Read command delay is 2 clock cycles. The case where  
the Write to Read delay is 1 clock cycle is disallowed.  
2. For read commands interrupting a Write burst, the DM pin must be used to mask the input data words which immediately  
precede the interrupting Read operation and the input data word which immediately follows the interrupting Read operation.  
3. For all cases of a Read interrupting a Write, the DQ and DQS buses must be released by the driving chip (i.e., the memory  
controller) in time to allow the buses to turn around before the SDRAM drives them during a read operation.  
4. If input Write data is masked by the Read command, the DQS inputs is ignored by the SDRAM.  
5. It is illegal for a Read command interrupt a Write with autoprecharge command.  
Elite Semiconductor Memory Technology Inc.  
Publication Date : Mar. 2009  
Revision : 1.0 20/49  
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