ESMT
M13S64164A
AC Timing Parameter & Specifications-continued
-5
-6
Symbol
Unit
Parameter
min
max
min
max
tCLmin or
tCHmin
tCLmin or
tCHmin
Half Clock Period
tHP
-
-
ns
DQ-DQS output hold time
Data hold skew factor
tQH
tQHS
tRAS
tRC
t
HP- tQHS
-
-
tHP- tQHS
-
ns
ns
ns
ns
ns
ns
ns
0.45
-
0.5
ACTIVE to PRECHARGE command
Row Cycle Time
40
120K
42
60
72
18
18
120K
60
-
-
-
-
-
-
-
-
AUTO REFRESH Row Cycle Time
ACTIVE to READ,WRITE delay
PRECHARGE command period
tRFC
tRCD
tRP
70
15
15
ACTIVE to READ with AUTOPRECHARGE
command
tRAP
15
120K
18
120K
ns
ACTIVE bank A to ACTIVE bank B command
Write recovery time
tRRD
tWR
10
15
2
-
12
18
2
-
ns
ns
tCK
tCK
us
tCK
tCK
tCK
tCK
ns
-
-
-
-
Write data in to READ command delay
Col. Address to Col. Address delay
Average periodic refresh interval
Write preamble
tWTR
tCCD
1
-
1
-
tREFI
-
15.6
-
-
15.6
-
tWPRE
tWPST
tRPRE
tRPST
tWPRES
0.25
0.4
0.9
0.4
0
0.25
0.4
0.9
0.4
0
Write postamble
0.6
1.1
0.6
-
0.6
1.1
0.6
-
DQS read preamble
DQS read postamble
Clock to DQS write preamble setup time
Load Mode Register / Extended Mode
register cycle time
tMRD
2
-
1
-
tCK
Exit self refresh to READ command
tXSRD
tXSNR
200
75
-
-
200
75
-
-
tCK
ns
Exit self refresh to non-READ command
(tWR/tCK
)
(tWR/tCK
)
Autoprecharge write recovery+Precharge
time
tDAL
+
+
tCK
(tRP/tCK
)
(tRP/tCK)
Elite Semiconductor Memory Technology Inc.
Publication Date : Jun. 2009
Revision : 1.4 7/48
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
