ESMT
M13S64164A
DC Specifications
Version
Parameter
Symbol
Test Condition
Unit Note
-6
-5
Operation Current
(One Bank Active)
tRC = tRC (min), tCK = tCK (min),
Active – Precharge
IDD0
110
100
mA
Burst Length = 2, tRC = tRC (min),
CL= 2.5, IOUT = 0mA,
Active-Read-Precharge
Operation Current
(One Bank Active)
IDD1
IDD2P
IDD2N
130
10
110
10
mA
mA
mA
Precharge Power-down
Standby Current
CKE ≤ VIL(max), tCK = tCK (min),
All banks idle
CKE ≥ VIH(min), CS ≥ VIH(min),
tCK = tCK (min)
Idle Standby Current
70
70
Active Power-down Standby
Current
All banks ACT, CKE ≤ VIL(max),
IDD3P
IDD3N
IDD4R
20
90
15
80
mA
mA
mA
tCK = tCK (min)
One bank; Active-Precharge,
Active Standby Current
t
RC = tRAS(max), tCK = tCK (min)
Burst Length = 2, CL= 2.5 ,
tCK = tCK (min), IOUT = 0mA
Operation Current (Read)
180
160
Burst Length = 2, CL= 2.5 ,
tCK = tCK (min)
Operation Current (Write)
IDD4W
180
160
mA
Auto Refresh Current
Self Refresh Current
IDD5
IDD6
140
5
120
5
mA
mA
tRC ≥ tRFC(min)
CKE ≤ 0.2V
1
Operation Current
(4 bank interleaving)
Burst Length = 4, tRC = tRC (min),
IOUT = 0mA
IDD7
235
215
mA
Note: 1. Enable on-chip refresh and address counters.
AC Operation Conditions & Timing Specification
AC Operation Conditions
Parameter
Symbol
VIH(AC)
VIL(AC)
VID(AC)
Min
Max
Unit
V
Note
Input High (Logic 1) Voltage, DQ, DQS and DM signals
Input Low (Logic 0) Voltage, DQ, DQS and DM signals
VREF + 0.31
VREF - 0.31
VDDQ+0.6
V
0.7
V
1
2
Input Different Voltage, CLK and CLK inputs
VIX(AC)
0.5*VDDQ-0.2 0.5*VDDQ+0.2
V
Input Crossing Point Voltage, CLK and CLK inputs
Note1. VID is the magnitude of the difference between the input level on CLK and the input on CLK .
2. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the DC level of the
same.
Input / Output Capacitance
(VDD = 2.3V~2.7V, VDDQ=2.3V~2.7V, TA = 25°C , f = 1MHz)
Parameter
Symbol
Min
Max
Unit
Input capacitance
CIN1
2.5
3.5
pF
(A0~A11, BA0~BA1, CKE, CS , RAS , CAS , WE )
CIN2
2.5
3.5
pF
Input capacitance (CLK, CLK )
Data & DQS input/output capacitance
Input capacitance (DM)
COUT
CIN3
4.0
4.0
5.5
5.5
pF
pF
Elite Semiconductor Memory Technology Inc.
Publication Date : Jun. 2009
Revision : 1.4 5/48
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
