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M13S64164A_09 参数 Datasheet PDF下载

M13S64164A_09图片预览
型号: M13S64164A_09
PDF下载: 下载PDF文件 查看货源
内容描述: 1M ×16位×4银行双倍数据速率SDRAM [1M x 16 Bit x 4 Banks Double Data Rate SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 48 页 / 1552 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
M13S64164A  
Power down  
Power down is entered when CKE is registered low (no accesses can be in progress). If power-down occurs when all banks are  
idle, this mode is referred to as precharge power-down; if power-down occurs when there is a row active in any bank, this mode is  
referred to as active power-down. Entering power-down deactivates the input and output buffers, excluding CLK, CLK and CKE.  
For maximum power savings, the user has the option of disabling the DLL prior to entering power-down. In that case, the DLL must  
be enabled after exiting power-down, and 200 clock cycles must occur before a READ command can be issued. However,  
power-down duration is limited by the refresh requirements of the device, so in most applications, the self-refresh mode is preferred  
over the DLL disable power-down mode. In the power-down, CKE LOW and a stable clock signal must be maintained at the inputs  
of the DDR SDRAM, and all other input signals are “Don’t Care”. The power-down state is synchronously exited when CKE is  
registered HIGH (along with a NOP or DESELECT command). A valid executable command may be applied one clock cycle later.  
C L K  
C L K  
tIS  
tIS  
CK E  
VALID  
NOP  
C O M M A N D  
NOP  
VALID  
No column  
acess  
in program  
Enter power-down  
mode  
Exit power-down  
mode  
Elite Semiconductor Memory Technology Inc.  
Publication Date : Jun. 2009  
Revision : 1.4 25/48  
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