ESMT
AC Timing Parameter & Specifications - continued
Parameter
Symbol
-3.6
Min
t
CL
min
or
t
CH
min
t
HP
-0.4
11
16
18
5
4
4
3
15
2
1
-
0.25
0.4
0.9
0.4
0
2
200
75
(t
WR
/t
CK
)
+(t
RP
/t
CK
)
Max
-
-
120K
ns
-
-
-
-
-
-
-
-
-
7.8
-
0.6
1.1
0.6
-
-
-
-
-
Min
t
CL
min
or
t
CH
min
t
HP
-0.45
10
15
17
5
4
4
3
15
2
1
-
0.25
0.4
0.9
0.4
0
2
200
75
(t
WR
/t
CK
)
+(t
RP
/t
CK
)
-4
Max
-
-
120K
ns
-
-
-
-
-
-
-
-
-
7.8
-
0.6
1.1
0.6
-
-
-
-
-
Min
t
CL
min
or
t
CH
min
t
HP
-0.45
8
12
14
4
4
4
2
15
2
1
-
0.25
0.4
0.9
0.4
0
2
200
75
(t
WR
/t
CK
)
+(t
RP
/t
CK
)
-5
M13S128324A
-6
Max
-
-
120K
ns
-
-
-
-
-
-
-
-
-
7.8
-
0.6
1.1
0.6
-
-
-
-
-
Min
t
CL
min
or
t
CH
min
t
HP
-0.5
7
10
12
3
3
3
2
15
2
1
-
0.25
0.4
0.9
0.4
0
2
200
75
(t
WR
/t
CK
)
+(t
RP
/t
CK
)
Max
-
-
120K
ns
-
-
-
-
-
-
-
-
-
7.8
-
0.6
1.1
0.6
-
-
-
-
-
Unit
Half Clock Period
DQ-DQS output hold time
ACTIVE to PRECHARGE
command
Row Cycle Time
AUTO REFRESH Row Cycle Time
ACTIVE to READ,WRITE delay
PRECHARGE command period
ACTIVE to READ with
AUTOPRECHARGE command
ACTIVE bank A to ACTIVE bank B
command
Write recovery time
Write data in to READ command
delay
Col. Address to Col. Address delay
Average periodic refresh interval
Write preamble
Write postamble
DQS read preamble
DQS read postamble
Clock to DQS write preamble
setup time
Load Mode Register / Extended
Mode register cycle time
Exit self refresh to READ
command
Exit self refresh to non-READ
command
Autoprecharge write
recovery+Precharge time
t
HP
t
QH
t
RAS
t
RC
t
RFC
t
RCD
t
RP
t
RAP
t
RRD
t
WR
t
WTR
t
CCD
t
REFI
t
WPRE
t
WPST
t
RPRE
t
RPST
t
WPRES
t
MRD
t
XSRD
t
XSNR
t
DAL
ns
ns
t
CK
t
CK
t
CK
t
CK
t
CK
t
CK
t
CK
ns
t
CK
t
CK
us
t
CK
t
CK
t
CK
t
CK
ns
t
CK
t
CK
ns
t
CK
Elite Semiconductor Memory Technology Inc.
Publication Date : Jul. 2009
Revision : 2.3
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