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M12S128168A_08 参数 Datasheet PDF下载

M12S128168A_08图片预览
型号: M12S128168A_08
PDF下载: 下载PDF文件 查看货源
内容描述: 2M ×16位×4银行同步DRAM [2M x 16 Bit x 4 Banks Synchronous DRAM]
分类和应用: 动态存储器
文件页数/大小: 45 页 / 1036 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
M12S128168A  
Self refresh entry command  
( CS ,RAS , CAS , CKE = Low , WE = High)  
After the command execution, self refresh operation continues while CKE  
remains low. When CKE goes to high, the M12L128168A exits the self refresh mode.  
During self refresh mode, refresh interval and refresh operation are performed  
internally, so there is no need for external control.  
Before executing self refresh, all banks must be precharged.  
Burst stop command  
( CS , WE = Low, RAS , CAS = High)  
This command terminates the current burst operation.  
Burst stop is valid at every burst length.  
No operation  
( CS = Low , RAS , CAS , WE = High)  
This command is not a execution command. No operations begin or terminate by  
this command.  
Elite Semiconductor Memory Technology Inc.  
Publication Date: Apr. 2008  
Revision: 1.1  
16/45  
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