ESMT
M12L32162A
Operation Temperature Condition -40°C~105°C
DC CHARACTERISTICS
°C
(Recommended operating condition unless otherwise noted, TA = -40 to 105
VIH(min)/VIL(max)=2.0V/0.8V)
Version
-7
Parameter
Symbol
Test Condition
Burst Length = 1
Unit Note
Operating Current
(One Bank Active)
ICC1
100
mA
1
tRC ≥ tRC (min), tCC ≥ tCC (min), IOL= 0mA
Precharge Standby
Current in power-down
mode
ICC2P
2
2
CKE ≤ VIL(max), tCC =15ns
mA
mA
ICC2PS
CKE ≤ VIL(max), CLK ≤ VIL(max), tCC = ∞
CKE ≥ VIH(min), CS ≥ VIH(min), tCC =15ns
25
mA
ICC2N
Precharge Standby
Current in non
Input signals are changed one time during 30ns
power-down mode
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
15
mA
mA
ICC2NS
ICC3P
Input signals are stable
10
10
CKE ≤ VIL(max), tCC =15ns
Active Standby Current
in power-down mode
ICC3PS
CKE ≤ VIL(max), CLK ≤ VIL(max), tCC = ∞
CKE ≥ VIH(min), CS ≥ VIH(min), tCC=15ns
25
mA
mA
ICC3N
Active Standby Current
in non power-down
mode
Input signals are changed one time during 2clks
All other pins ≥ VDD-0.2V or ≤ 0.2V
(One Bank Active)
CKE ≥ VIH (min), CLK ≤ VIL(max), tCC= ∞
Input signals are stable
15
ICC3NS
IOL= 0Ma, Page Burst
Operating Current
(Burst Mode)
120
120
ICC4
ICC5
mA
mA
1
2
All Band Activated, tCCD = tCCD (min)
Refresh Current
tRC ≥ tRC(min)
Note: 1.Measured with outputs open. Addresses are changed only one time during tCC(min).
2.Refresh period is 16ms. Addresses are changed only one time during tCC(min).
Elite Semiconductor Memory Technology Inc.
Publication Date : Dec. 2007
Revision : 1.2 5/28
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
