ESMT
M12L32162A
Operation Temperature Condition -40°C~105°C
SDRAM
1M x 16Bit x 2Banks
Synchronous DRAM
FEATURES
GENERAL DESCRIPTION
The M12L32162A is 33,554,432 bits synchronous high data
rate Dynamic RAM organized as 2 x 1,048,576 words by 16
bits, fabricated with high performance CMOS technology.
Synchronous design allows precise cycle control with the use
of system clock I/O transactions are possible on every clock
cycle. Range of operating frequencies, programmable burst
length and programmable latencies allow the same device to
be useful for a variety of high bandwidth, high performance
memory system applications.
z
z
z
z
JEDEC standard 3.3V power supply
LVTTL compatible with multiplexed address
Dual banks operation
MRS cycle with address key programs
-
-
-
CAS Latency (1, 2 & 3 )
Burst Length (1, 2, 4, 8 & full page)
Burst Type (Sequential & Interleave)
z
All inputs are sampled at the positive going edge of the
system clock
z
z
z
z
Burst Read Single-bit Write operation
DQM for masking
Auto refresh (Not support self refresh)
16ms refresh period (4K cycle)
ORDERING INFORMATION
Part NO.
MAX Freq. PACKAGE COMMENTS
54 Pin
TSOP(II)
Pb-free
M12L32162A-7TVG
M12L32162A-7BVG
143MHz
143MHz
54 Ball BGA
Pb-free
PIN CONFIGURATION (TOP VIEW)
54 PIN TSOP(II)
54 Ball FVBGA(8mmx8mm)
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
V
SS
1
V
DD
1
2
3
4
5
6
7
8
9
DQ15
2
DQ0
V
SSQ
3
V
DDQ
DQ1
DQ2
DQ14
DQ13
4
VSS
DQ15
VSSQ
VDDQ
A
B
C
D
E
F
DQ0
DQ2
DQ4
DQ6
LDQM
VDD
DQ1
DQ3
DQ5
5
V
DDQ
6
V
SSQ
DQ3
DQ4
DQ12
DQ11
7
DQ14 DQ13
DQ12 DQ11
DQ10 DQ9
VDDQ
VSSQ
VDDQ
VSS
VSSQ
VDDQ
VSSQ
8
V
SSQ
9
V
DDQ
DQ5
DQ6
DQ10
DQ9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
V
DDQ
V
SSQ
DQ8
DQ7
V
SS
V
DD
DQ8
UDQM
NC
NC
NC
VDD
DQ7
WE
CS
LDQM
WE
UDQM
CLK
CKE
NC
CAS
RAS
CS
CLK
A11
CKE
A9
RAS
NC
CAS
BA
G
H
J
A
A
A
A
A
A
A
V
11
NC
9
BA
8
A
10/AP
A8
A7
A5
A6
A4
A0
A9
A1
A2
A10
VDD
7
A
A
A
A
0
1
2
3
6
5
VSS
4
SS
V
DD
Elite Semiconductor Memory Technology Inc.
Publication Date : Dec. 2007
Revision : 1.2 2/28
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
