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M12L2561616A-7TIG2A 参数 Datasheet PDF下载

M12L2561616A-7TIG2A图片预览
型号: M12L2561616A-7TIG2A
PDF下载: 下载PDF文件 查看货源
内容描述: [Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54]
分类和应用: 动态存储器光电二极管内存集成电路
文件页数/大小: 45 页 / 681 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
M12L2561616A (2A)  
Operation Temperature Condition -40°C~85°C  
Current  
State  
BA  
ADDR  
ACTION  
Note  
CS RAS CAS WE  
H
L
L
L
L
L
L
H
L
L
L
L
L
L
H
L
L
L
L
H
L
L
L
L
X
H
H
H
L
X
H
H
L
H
H
L
X
H
H
L
H
H
L
X
H
L
H
L
X
H
H
L
X
H
L
X
H
L
X
X
H
L
X
H
L
X
X
X
X
X
X
X
H
L
X
X
X
BA  
BA  
BA  
X
X
X
X
BA  
BA  
BA  
X
X
X
X
X
X
X
X
X
X
CA  
RA  
A10/AP  
NOP Idle after tRP  
NOP Idle after tRP  
ILLEGAL  
ILLEGAL  
ILLEGAL  
NOP Idle after tRP  
ILLEGAL  
NOP Row Active after tRCD  
NOP Row Active after tRCD  
ILLEGAL  
ILLEGAL  
ILLEGAL  
ILLEGAL  
ILLEGAL  
NOP Idle after tRFC  
NOP Idle after tRFC  
ILLEGAL  
ILLEGAL  
ILLEGAL  
Read with  
Auto  
Precharge  
2
2
2
4
L
L
X
X
X
X
X
H
H
H
L
L
L
X
H
H
L
Row  
Activating  
2
2
2
2
CA  
RA  
A10/AP  
X
X
X
X
X
X
X
X
X
X
X
Refreshing  
L
X
H
H
H
L
NOP Idle after 2clocks  
NOP Idle after 2clocks  
ILLEGAL  
ILLEGAL  
ILLEGAL  
Mode  
Register  
Accessing  
X
X
X
X
X
X
X
Abbreviations:  
RA = Row Address  
NOP = No Operation Command  
BA = Bank Address  
CA = Column Address  
AP = Auto Precharge  
*Note: 1. All entries assume the CKE was active (High) during the precharge clock and the current clock cycle.  
2. Illegal to bank in specified state; Function may be legal in the bank indicated by BA, depending on the state of the bank.  
3. Must satisfy bus contention, bus turn around, and/or write recovery requirements.  
4. NOP to bank precharge or in idle state. May precharge bank indicated by BA (and A10/AP).  
5. Illegal if any bank is not idle.  
Elite Semiconductor Memory Technology Inc.  
Publication Date: Jun. 2012  
Revision: 1.1 25/45  
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