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M12L16161A-5TIG 参数 Datasheet PDF下载

M12L16161A-5TIG图片预览
型号: M12L16161A-5TIG
PDF下载: 下载PDF文件 查看货源
内容描述: 512K X 16位X 2Banks同步DRAM [512K x 16Bit x 2Banks Synchronous DRAM]
分类和应用: 动态存储器
文件页数/大小: 29 页 / 698 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
M12L16161A  
Operation temperature condition -40~85℃  
Page Write Cycle at Different Bank @Burst Length = 4  
0
1
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
CLOCK  
CKE  
HIGH  
CS  
RAS  
CAS  
*Note2  
CAa  
ADDR  
BA  
CBb  
CAc  
RBb  
CBd  
RAa  
A10/AP  
DQ  
RAa  
RBb  
DBb3 DAc0 DAc1  
DBb2  
DAa1 DAa2  
DBb0 DBb1  
DBd0  
DAa0  
DAa3  
DBd1  
tCDL  
tRDL  
WE  
*Note1  
DQM  
Precharge  
(Both Banks)  
Row Active  
(A-Bank)  
Write  
(B-Bank)  
Row Active  
(B-Bank)  
Write  
(A-Bank)  
Write  
(A-Bank)  
Write  
(B-Bank)  
: Don't care  
*Note: 1.To interrupt burst write by Row precharge, DQM should be asserted to mask invalid input data.  
2.To interrupt burst write by row precharge, both the write and the precharge banks must be the same.  
Elite Semiconductor Memory Technology Inc.  
Publication Date : May. 2007  
Revision : 1.1 17/29  
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