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M12L128168A_09 参数 Datasheet PDF下载

M12L128168A_09图片预览
型号: M12L128168A_09
PDF下载: 下载PDF文件 查看货源
内容描述: 2M ×16位×4银行同步DRAM [2M x 16 Bit x 4 Banks Synchronous DRAM]
分类和应用: 动态存储器
文件页数/大小: 45 页 / 668 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
M12L128168A  
Important Notice  
All rights reserved.  
No part of this document may be reproduced or duplicated in any form or by any means without  
the prior permission of ESMT.  
The contents contained in this document are believed to be accurate at the time of publication.  
ESMT assumes no responsibility for any error in this document, and reserves the right to change  
the products or specification in this document without notice.  
The information contained herein is presented only as a guide or examples for the application of  
our products. No responsibility is assumed by ESMT for any infringement of patents, copyrights,  
or other intellectual property rights of third parties which may result from its use. No license, either  
express , implied or otherwise, is granted under any patents, copyrights or other intellectual  
property rights of ESMT or others.  
Any semiconductor devices may have inherently a certain rate of failure. To minimize risks  
associated with customer's application, adequate design and operating safeguards against injury,  
damage, or loss from such failure, should be provided by the customer when making application  
designs.  
ESMT's products are not authorized for use in critical applications such as, but not limited to, life  
support devices or system, where failure or abnormal operation may directly affect human lives or  
cause physical injury or property damage. If products described here are to be used for such  
kinds of application, purchaser must do its own quality assurance testing appropriate to such  
applications.  
Elite Semiconductor Memory Technology Inc.  
Publication Date: Mar. 2009  
Revision: 2.3 45/45  
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