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M12L128168A_09 参数 Datasheet PDF下载

M12L128168A_09图片预览
型号: M12L128168A_09
PDF下载: 下载PDF文件 查看货源
内容描述: 2M ×16位×4银行同步DRAM [2M x 16 Bit x 4 Banks Synchronous DRAM]
分类和应用: 动态存储器
文件页数/大小: 45 页 / 668 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
M12L128168A  
Revision History  
Revision  
1.0  
Date  
Description  
2002.10.31  
2003.03.25  
Original  
Modify die from 0.165mm to 0.15mm  
1.1  
Delete speed distribution -5 to prevent confusion of  
customers  
1.2  
1.3  
1.4  
1.5  
1.6  
2003.09.02  
2004.08.23  
2005.03.17  
2005.04.22  
2005.06.07  
Correct typing error  
1.Add Pb-free to ordering information  
2.Modify P8 from bank precharge state to ldle state  
Modify refresh spec  
1.Modify tREF spec  
2.Modify tRFC spec  
1.7  
1.8  
2005.09.02  
2006.09.08  
Add revision history  
Add -5T to ordering information  
1.Modify AC parameter (tCH, tCL, tRP, tRAS, tRC)  
2.Modify tSAC, tOH timing  
1.9  
2006.10.11  
2.0  
2.1  
2006.10.24  
2007.07.18  
Modify tRFC , tSHZ timing  
Add BGA package  
1.Rename A13,A12 to BA0,BA1  
2.Modify the specification of tOH for -6 and -7  
3.Modify the test condition of lIL and ICC3N  
4.Modify the description about self refresh operation  
Chang back to the specification of tOH of the previous  
version  
2.2  
2.3  
2009.02.23  
2009.03.05  
Elite Semiconductor Memory Technology Inc.  
Publication Date: Mar. 2009  
Revision: 2.3 44/45  
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