欢迎访问ic37.com |
会员登录 免费注册
发布采购

M11L16161A-45T 参数 Datasheet PDF下载

M11L16161A-45T图片预览
型号: M11L16161A-45T
PDF下载: 下载PDF文件 查看货源
内容描述: [EDO DRAM, 1MX16, 45ns, CMOS, PDSO44, TSOP2-50/44]
分类和应用: 动态存储器光电二极管内存集成电路
文件页数/大小: 16 页 / 202 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
 浏览型号M11L16161A-45T的Datasheet PDF文件第1页浏览型号M11L16161A-45T的Datasheet PDF文件第2页浏览型号M11L16161A-45T的Datasheet PDF文件第4页浏览型号M11L16161A-45T的Datasheet PDF文件第5页浏览型号M11L16161A-45T的Datasheet PDF文件第6页浏览型号M11L16161A-45T的Datasheet PDF文件第7页浏览型号M11L16161A-45T的Datasheet PDF文件第8页浏览型号M11L16161A-45T的Datasheet PDF文件第9页  
$%
ABSOLUTE MAXIMUM RATINGS
Voltage on Any pin Relative to Vss
5V Product
… ……-1V to +7V
3.3V Product
… ……-0.5V to +4.6V
Operating Temperature, T
A
(ambient) ….0
°
C to +70
°
C
Storage Temperature (plastic) ……….-55
°
C to +150
°
C
Power Dissipation …………………………………1.0W
Short Circuit Output Current ……………………50mA
M11B16161A / M11B16161SA
M11L16161A / M11L16161SA
Permanent device damage may occur if “Absolute
Maximum Ratings” are exceeded. This is a stress rating
only, and functional operation of the device above those
conditions indicated in the operational sections of this
specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may
affect reliability.
DC ELECTRICAL CHARACTERISTICS AND RECOMMENDED
OPERATING CONDITIONS
(0
°
C
T
A
70
°
C )
PARAMETER
Supply Voltage
Supply Voltage
Input High Voltage
Input Low Voltage
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
0V
V
IN
V
IH(max)
0V
V
OUT
V
CC
Output(s) disable
5V
I
OH
= -5 mA
3.3V I
OH
= -2 mA
5V
I
OL
= 4.2 mA
3.3V I
OL
= 2 mA
CONDITIONS
SYMBOL
MIN
V
CC
V
SS
V
IH
V
IL
I
LI
I
LO
V
OH
V
OL
3.0
0
2.0
-1.0
-10
-10
2.4
-
3.3V
MAX
3.6
0
V
CC
+0.3
0.8
10
10
-
0.4
MIN
4.5
0
2.4
-1.0
-10
-10
2.4
-
5V
MAX
5.5
0
V
CC
+0.3
0.8
10
10
-
0.4
V
V
V
V
µ
A
µ
A
V
V
1
1
1
UNITS NOTES
Note : 1.All Voltages referenced to V
SS
MAX
-45
150
4
2
I
CC3
I
CC4
I
CC6
I
CC7
I
CC8
150
150
150
500
500
-50
140
4
2
140
140
140
500
500
-60
130
4
2
130
130
130
500
500
PARAMETER
Operating Current
Standby Current
CONDITIONS
RAS
,
CAS
cycling , t
RC
=min
SYMBOL
I
CC1
I
CC2
UNITS NOTES
mA
mA
mA
mA
mA
mA
µ
A
µ
A
2
1,3
1,2
TTL interface ,
RAS
,
CAS
= V
IH
,
D
OUT
=High-Z
CMOS interface,
RAS
,
CAS
V
CC
-0.2V
RAS
only refresh Current
t
RC
= min
t
PC
= min
t
RC
= min
Standby with CBR refresh, t
RC
= 62.4us
t
RAS
300ns, D
OUT
=Hi-Z, CMOS interface
RAS
,
CAS
0.2V, D
OUT
=Hi-Z, CMOS
interface
EDO Page Mode Current
CAS
Before
RAS
Refresh
Current
Battery Backup Current
(S-ver. Only)
Self Refresh Current
(S-ver. Only)
Note
:
1. I
CC
max is specified at the output open condition.
2. Address can be changed twice or less while
RAS
=V
IL .
3. Address can be changed once or less while
CAS
=V
IH
.
Elite Semiconductor Memory Technology Inc.
Publication Date
:
May. 2001
Revision
:
1.3
3/16