ESMT
F49L800UA/F49L800BA
OPERATING RANGES
Commercial (C) Devices Ambient Temperature (TA) . . . . . . . . . . . 0°C to +70°C
VCC Supply Voltages VCC for all devices . . . . . . . . . . . . . . . . . . . . .2.7 V to 3.6 V
Operating ranges define those limits between which the functionality of the device is guaranteed.
Table 8. Capacitance TA = 25°C , f = 1.0 MHz
Symbol
CIN1
Description
Conditions
VIN = 0V
Min.
Typ.
Max.
8
Unit
pF
Input Capacitance
CIN2
Control Pin Capacitance
Output Capacitance
VIN = 0V
12
pF
COUT
VOUT = 0V
12
pF
9. DC CHARACTERISTICS
Table 9. DC Characteristics TA = 0C to 70C, VCC = 2.7V to 3.6V
Symbol
ILI
Description
Conditions
VIN = VSS or VCC, VCC = VCC max.
VCC = VCC max; A9=10.5V
VOUT = VSS or VCC, VCC = VCC max
@5MHz
Min.
Typ.
Max.
±1
Unit
uA
Input Leakage Current
A9 Input Leakage Current
Output Leakage Current
ILIT
35
uA
ILO
±1
uA
9
2
25±
mA
= VIL,
= VIH
OE
CE
( Byte Mode )
@1MHz
5
mA
ICC1
VCC Active Read Current
@5MHz
@1MHz
9
2
40
5
mA
mA
mA
uA
= VIL,
= VIH
OE
CE
( Word Mode )
ICC2
ICC3
VCC Active write Current
VCC Standby Current
= VIL,
= VIH
20
25
50±
100
CE
OE
;
= VCC ±±0.3V
CE RESET
V
CC Standby Current
During Reset
= VSS ±±0.3V
ICC4
25
25
100
uA
RESET
ICC5
VIL
Automatic sleep mode
Input Low Voltage(Note 1)
Input High Voltage
VIH = VCC ±±0.3V; VIL = VSS ±±0.3V
100
0.8
uA
V
-0.5
VIH
0.7x VCC
VCC + 0.3
V
Voltage for Auto-Select
and Temporary Sector
Unprotect
VID
VCC =3.3V
10
10.5
0.45
V
V
VOL
VOH1
VOH2
VLKO
Output Low Voltage
Output High Voltage(TTL)
Output High Voltage
IOL = 4.0mA, VCC = VCC min
IOH = -2mA, VCC = VCC min
IOH = -100uA, VCC min
0.7x VCC
VCC -0.4
2.3
Low VCC Lock-out Voltage
2.5
V
Notes :
1. VIL min. = -1.0V for pulse width is equal to or less than 50 ns.
VIL min. = -2.0V for pulse width is equal to or less than 20 ns.
2. VIH max. = VCC + 1.5V for pulse width is equal to or less than 20 ns
If VIH is over the specified maximum value, read operation cannot be guaranteed.
3. Automatic sleep mode enable the low power mode when addresses remain stable for 250 ns
Elite Semiconductor Memory Technology Inc.
Publication Date : Jan. 2008
Revision: 1.6 19/47
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
