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F49L800BA-70TG 参数 Datasheet PDF下载

F49L800BA-70TG图片预览
型号: F49L800BA-70TG
PDF下载: 下载PDF文件 查看货源
内容描述: 8兆位( 1M ×8 / 512K ×16 ) 3V只有CMOS闪存 [8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory]
分类和应用: 闪存
文件页数/大小: 47 页 / 459 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
F49L800UA/F49L800BA  
7.4 More Device Operations  
Hardware Data Protection  
Logical Inhibit  
The command sequence requirement of unlock cycles for  
programming or erasing provides data protection against  
inadvertent writes. In addition, the following hardware  
data protection measures prevent accidental erasure or  
programming, which might otherwise be caused by  
Write cycles are inhibited by holding any one of  
=
OE  
V ,  
IL  
= V or  
= V . To initiate a write cycle,  
WE  
CE  
IH  
IH  
and  
must be a logical zero while  
is a  
OE  
WE  
CE  
logical one.  
spurious system level signals during V  
power-up and  
CC  
power-down transitions, or from system noise.  
Power Supply Decoupling  
In order to reduce power switching effect, each device  
should have a 0.1uF ceramic capacitor connected  
Low VCC Write Inhibit  
between its V  
and GND.  
CC  
When V  
is less than VLKO, the device does not accept  
CC  
any write cycles. This protects data during V  
power-up  
CC  
and power-down. The command register and all internal  
program/erase circuits are disabled, and the device  
Power-Up Sequence  
The device powers up in the Read Mode. In addition, the  
memory contents may only be altered after successful  
completion of the predefined command sequences.  
resets. Subsequent writes are ignored until V  
is  
CC  
greater than V  
. The system must provide the proper  
LKO  
signals to the control pins to prevent unintentional writes  
when V is greater than V  
.
LKO  
CC  
Power-Up Write Inhibit  
Write Pulse "Glitch" Protection  
If  
=
= V and  
= V during power up, the  
OE  
IH  
WE  
device does not accept commands on the rising edge of  
. The internal state machine is automatically reset to  
CE  
IL  
Noise pulses of less than 5 ns (typical) on  
do not initiate a write cycle.  
or  
WE  
CE  
WE  
reading array data on power-up.  
Elite Semiconductor Memory Technology Inc.  
Publication Date : Jan. 2008  
Revision: 1.6 17/47