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F49L320UA-70TIG 参数 Datasheet PDF下载

F49L320UA-70TIG图片预览
型号: F49L320UA-70TIG
PDF下载: 下载PDF文件 查看货源
内容描述: 32兆位( 4M ×8 / 2M ×16 ) 3V只有CMOS闪存 [32 Mbit (4M x 8/2M x 16) 3V Only CMOS Flash Memory]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 55 页 / 544 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
F49L320UA/F49L320BA  
Operation Temperature Condition -40°C~85°C  
COMMON FLASH MEMORY INTERFACE (CFI)  
The Common Flash Interface (CFI) specification outlines device and host system software interrogation handshake, which allows  
specific vendor-specified software algorithms to be used for entire families of devices. Software support can then be device-independent,  
JEDEC ID-independent, and forward- and backward- compatible for the specified flash device families. Flash vendors can standardize  
their existing interfaces for long-term compatibility.  
This device enters the CFI Query mode when the system writes the CFI Query command, 98h, to address 55h in word mode (or address  
AAh in byte mode), any time the device is ready to array data. The system can read CFI information at the address given in Tables 8-10  
in word mode, the upper address bits (A7-MSB) must be all zeros. To terminate reading CFI data, the system must write the reset  
command.  
The system can also write the CFI query command when the device is in the autoselect mode. The device enters the CFI query mode,  
and the system can read CFI data at the addresses given in Tables 8-10. The system must write the reset command to return the device  
to the autoselect mode.  
Table 8 CFI Query Identification String  
Addresses  
(Word Mode) (Byte Mode)  
Address  
Data  
Description  
10h  
11h  
12h  
20h  
22h  
24h  
0051h  
0052h  
0059h  
Query Unique ASCII string “QRY”  
13h  
14h  
26h  
28h  
0002h  
0000h  
Primary OEM Command Set  
15h  
16h  
2Ah  
2Ch  
0040h  
0000h  
Address for Primary Extended Table  
17h  
18h  
2Eh  
30h  
0000h  
0000h  
Alternate OEM Command Set (00h = none exists)  
Address for Alternate OEM Extended Table (00h = none exists)  
19h  
1Ah  
32h  
34h  
0000h  
0000h  
Elite Semiconductor Memory Technology Inc.  
Publication Date : Sep. 2008  
Revision: 1.1 22/55  
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