ESMT
F49L160UA/F49L160BA
Table 10 Device Geometry Definition
Addresses
(Word Mode) (Byte Mode)
Address
Data
Description
27h
4Eh
0015h
Device Size = 2N byte
28h
29h
2Ah
2Bh
50h
52h
54h
56h
0002h
0000h
0000h
0000h
Flash Device Interface description (refer to CFI publication 100)
Max. number of byte in multi-byte write = 2N
(00h = not supported)
2Ch
58h
0004h
Number of Erase Block Regions within device
2Dh
2Eh
2Fh
30h
31h
32h
33h
34h
35h
36h
37h
38h
39h
3Ah
3Bh
3Ch
5Ah
5Ch
5Eh
60h
62h
64h
66h
68h
6Ah
6Ch
6Eh
70h
72h
74h
76h
78h
0000h
0000h
0004h
0000h
0001h
0000h
0020h
0000h
0000h
0000h
0080h
0000h
001Eh
0000h
0000h
0001h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
Erase Block Region 2 Information
Erase Block Region 3 Information
Erase Block Region 4 Information
Table 11 Primary Vendor-Specific Extended Query
Addresses
(Word Mode) (Byte Mode)
Address
Data
Description
40h
41h
42h
80h
82h
84h
0050h
0052h
0049h
Query-unique ASCII string “PRI”
43h
44h
86h
88h
0031h
0030h
Major version number, ASCII
Minor version number, ASCII
Address Sensitive Unlock
0 = Required, 1 = Not Required
Erase Suspend
0 = Not Supported, 1 = To Read Only, 2 = To Read & Write
Erase Protect
0 = Not Supported, X = Number of sectors in per group
Sector Temporary Unprotect
00 = Not Supported, 01 = Supported
45h
46h
47h
8Ah
8Ch
8Eh
0000h
0002h
0001h
48h
49h
4Ah
90h
92h
94h
0001h
0004h
0000h
Sector Protect/Group Unprotect scheme
Simultaneous Operation
00 = Not Supported, 01 = Supported
Burst Mode Type
00 = Not Supported, 01 = Supported
Page Mode Type
4Bh
4Ch
96h
98h
0000h
0000h
00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page
Elite Semiconductor Memory Technology Inc.
Publication Date : Jan. 2008
Revision: 1.8 20/50
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
