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F49L160UA_1 参数 Datasheet PDF下载

F49L160UA_1图片预览
型号: F49L160UA_1
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位( 2M ×8 / 1M ×16 ) 3V只有CMOS闪存 [16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory]
分类和应用: 闪存
文件页数/大小: 51 页 / 459 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
F49L160UA/F49L160BA  
Operation Temperature condition -40°C~85°C  
Table 16.  
Controlled Program/Erase Operations(TA = -40°C to 85°C, VCC = 3.0V~3.6V)  
CE  
-90  
Symbol  
Description  
Min.  
Max.  
Unit  
Write Cycle Time (Note 1)  
Address Setup Time  
90  
ns  
t
WC  
0
45  
45  
0
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
t
AS  
AH  
DS  
DH  
Address Hold Time  
t
Data Setup Time  
t
Data Hold Time  
t
Output Enable Setup Time  
Read Recovery Time Before Write  
0
t
OES  
0
t
GHEL  
0
Setup Time  
Hold Time  
t
WE  
WE  
CE  
WS  
WH  
0
t
Pulse Width  
35  
30  
t
CP  
Pulse Width High  
CE  
t
CPH  
Byte  
9(typ.)  
us  
us  
Programming  
Operation(note2)  
t
t
WHWH1  
WHWH2  
Word  
11(typ.)  
Sector Erase Operation (note2)  
0.7(typ.)  
sec  
Notes :  
1. Not 100% tested.  
2. See the "Erase and Programming Performance" section for more information.  
Elite Semiconductor Memory Technology Inc.  
Publication Date : Jan. 2008  
Revision: 1.4 27/51  
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