EFST
OPERATING RANGES
preliminary
F49L004UA / F49L004BA
Commercial (C) Devices Ambient Temperature (TA) . . . . . . . . . . . 0°C to +70°C
VCC Supply Voltages VCC for all devices . . . . . . . . . . . . . . . . . . . . .2.7 V to 3.6 V
Operating ranges define those limits between which the functionality of the device is guaranteed.
Table 8. Capacitance TA = 25°C , f = 1.0 MHz
Symbol
CIN1
Description
Conditions
VIN = 0V
Min.
Typ.
Max.
8
Unit
pF
Input Capacitance
CIN2
Control Pin
VIN = 0V
12
pF
Capacitance
COUT
Output Capacitance
VOUT = 0V
12
pF
9. DC CHARACTERISTICS
Table 9. DC Characteristics TA = 0C to 70C, VCC = 2.7V to 3.6V
Symbol
Description
Conditions
Min.
Typ.
Max.
±1
35
Unit
uA
ILI
Input Leakage Current
A9 Input Leakage Current
Output Leakage Current
VIN = VSS or VCC, VCC = VCC max.
VCC = VCC max; A9=12.5V
VOUT = VSS or VCC, VCC = VCC max
ILIT
ILO
uA
±1
12
uA
@5MHz
@1MHz
7
2
mA
mA
mA
uA
= V ,
CE
IL
ICC1
VCC Active Read Current
= V
OE
4
IH
ICC2
ICC3
VCC Active write Current
VCC Standby Current
= V ,
= V
15
0.2
30
5
CE
OE
= VCC ± 0.3V
IL
IH
;
CE RESET
= VSS ± 0.3V
VCC Standby Current
ICC4
0.2
0.2
5
uA
RESET
During Reset
ICC5
VIL
Automatic sleep mode
Input Low Voltage(Note 1)
Input High Voltage
VIH = VCC ± 0.3V; VIL = VSS ± 0.3V
5
uA
V
-0.5
0.8
VIH
0.7x VCC
VCC + 0.3
V
Voltage for Auto-Select
and Temporary Sector
Unprotect
Output Low Voltage
Output High Voltage(TTL)
Output High Voltage
VID
VCC =3.3V
11.5
12.5
0.45
V
V
VOL
VOH1
VOH2
VLKO
IOL = 4.0mA, VCC = VCC min
IOH = -2mA, VCC = VCC min
IOH = -100uA, VCC min
0.85x VCC
VCC -0.4
2.3
Low VCC Lock-out Voltage
2.5
V
Notes :
1. VIL min. = -1.0V for pulse width is equal to or less than 50 ns.
VIL min. = -2.0V for pulse width is equal to or less than 20 ns.
2. VIH max. = VCC + 1.5V for pulse width is equal to or less than 20 ns
If VIH is over the specified maximum value, read operation cannot be guaranteed.
3. Automatic sleep mode enable the low power mode when addresses remain stable for 250 ns
Elite Flash Storage Technology Inc.
Publication Date : Aug. 2003
Revision: 0.2 18/46
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
