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F25L04UA-75PG 参数 Datasheet PDF下载

F25L04UA-75PG图片预览
型号: F25L04UA-75PG
PDF下载: 下载PDF文件 查看货源
内容描述: 3V只有4兆位串行闪存 [3V Only 4 Mbit Serial Flash Memory]
分类和应用: 闪存存储内存集成电路光电二极管时钟
文件页数/大小: 25 页 / 271 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
F25L04UA  
Instructions  
Instructions are used to Read, Write (Erase and Program), and  
configure the F25L04UA. The instruction bus cycles are 8 bits  
each for commands (Op Code), data, and addresses. Prior to  
executing any Byte-Program, Auto Address Increment (AAI)  
programming, Sector-Erase, Block-Erase, or Chip-Erase  
instructions, the Write-Enable (WREN) instruction must be  
executed first. The complete list of the instructions is provided in  
Table 5. All instructions are synchronized off a high to low  
SCK starting with the most significant bit. CE must be driven  
low before an instruction is entered and must be driven high after  
the last bit of the instruction has been shifted in (except for Read,  
Read-ID and Read-Status-Register instructions). Any low to high  
transition on CE , before receiving the last bit of an instruction  
bus cycle, will terminate the instruction in progress and return the  
device to the standby mode.  
Instruction commands (Op Code), addresses, and data are all  
input from the most significant bit (MSB) first.  
transition of CE . Inputs will be accepted on the rising edge of  
TABLE 5: DEVICE OPERATION INSTRUCTIONS  
Max  
Freq  
MHz  
Bus Cycle4  
Cycle Type/  
Operation1,2  
1
2
3
4
5
6
SIN  
SOUT  
SIN  
SOUT  
SIN  
SOUT  
SIN  
SOUT SIN SOUT SIN  
SOUT  
Read  
33  
03H  
0BH  
20H  
60H  
02H  
Hi-Z A23-A16 Hi-Z A15-A8 Hi-Z A7-A0 Hi-Z  
Hi-Z A23-A16 Hi-Z A15-A8 Hi-Z A7-A0 Hi-Z  
Hi-Z A23-A16 Hi-Z A15-A8 Hi-Z A7-A0 Hi-Z  
X
X
-
DOUT  
X
-
-
High-Speed-Read  
X
DOUT  
Sector-Erase4,5  
Chip-Erase5  
Hi-Z  
-
-
-
-
-
-
-
Byte-Program5  
Hi-Z A23-A16 Hi-Z A15-A8 Hi-Z A7-A0 Hi-Z DIN  
Hi-Z  
50  
and  
75  
Auto Address Increment -  
word programming (AAI)6  
Read-Status-Register  
(RDSR)  
AFH Hi-Z A23-A16 Hi-Z A15-A8 Hi-Z A7-A0 Hi-Z DIN  
Hi-Z  
Note7  
-
05H  
50H  
01H  
Hi-Z  
Hi-Z  
Hi-Z  
X
-
DOUT  
-
-
-
Note7  
-
-
-
Note7  
-
-
-
Enable-Write-Status-Register  
and  
100  
(EWSR)8  
Write-Status-Register  
(WRSR)8  
Data  
Hi-Z  
-
-
-
-
-
-.  
-
-
-
-
-
-
-
Write-Enable (WREN) 11  
Write-Disable (WRDI)  
Jedec-Read-ID (JEDEC-ID) 10  
06H  
04H  
9FH  
Hi-Z  
Hi-Z  
Hi-Z  
-
-
X
8CH  
X
8CH  
X
8CH  
-
-
1. Operation: SIN = Serial In, SOUT = Serial Out  
2. X = Dummy Input Cycles (VIL or VIH); - = Non-Applicable Cycles (Cycles are not necessary)  
3. One bus cycle is eight clock periods.  
4. Sector addresses: use AMS-A12, remaining addresses can be VIL or VIH  
5. Prior to any Byte-Program, AAI-Program, Sector-Erase ,or Chip-Erase operation, the Write-Enable (WREN) instruction must be  
executed.  
6. To continue programming to the next sequential address location, enter the 8-bit command, AFH, followed by the data to be  
programmed.  
7. The Read-Status-Register is continuous with ongoing clock cycles until terminated by a low to high transition on CE .  
8. The Enable-Write-Status-Register (EWSR) instruction and the Write-Status-Register (WRSR) instruction must work in conjunction  
of each other. The WRSR instruction must be executed immediately (very next bus cycle) after the EWSR instruction to make both  
instructions effective.  
9. The Jedec-Read-ID is continuous with on going clock cycles until terminated by a low to high transition on CE .  
10. The Jedec-Read-ID is output first byte 8CH as manufacture ID; second byte 8CH as top memory type; third byte 8CH as memory  
capacity.  
11. The Write-Enable (WREN) instruction and the Write-Status-Register (WRSR) instruction must work in conjunction of each other.  
The WRSR instruction must be executed immediately (very next bus cycle) after the WREN instruction to make both instructions  
effective. Both EWSR and WREN can enable WRSR, user just need to execute one of it. A successful WRSR can reset WREN.  
Elite Semiconductor Memory Technology Inc.  
Publication Date: Jan. 2009  
Revision: 1.2 7/25  
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