ESMT
Flash
FEATURES
Single supply voltage 2.7~3.6V
Speed
- Read max frequency : 33MHz
- Fast Read max frequency : 50MHz; 75MHz; 100MHz
Low power consumption
- Active current :40mA
- Standby current : 25
μ
A
Reliability
- 100,000 program/erase cycles typically
- 10 years Data Retention
Program
- Byte program time 8
μ
s(typical)
Erase
- Chip erase time 11s(typical)
F25L04UA
3V Only 4 Mbit Serial Flash Memory
- Sector erase time 0.7s(typical)
Auto Address Increment (AAI) Programming
- Decrease total chip programming time over
Byte-Program operations
SPI Serial Interface
- SPI Compatible : Mode 0 and Mode3
End of program or erase detection
Write Protect (
WP
)
Hold Pin ( HOLD )
Package avalible
- 8-pin SOIC 150-mil
ORDERING INFORMATION
Part No.
F25L04UA -50PG
F25L04UA -75PG
Speed
50MHz
75MHz
Package
8 lead SOIC
8 lead SOIC
COMMENTS
Pb-free
Pb-free
Pb-free
F25L04UA -100PG 100MHz 8 lead SOIC
GENERAL DESCRIPTION
The F25L04UA is a 4Megabit, 3V only CMOS Serial Flash
memory device. ESMT’s memory devices reliably store memory
data even after 100,000 program and erase cycles.
The F25L04UA features a sector erase architecture. The device
memory array is divided into one 8K bytes, two 4K bytes, one
16K bytes, one 32K bytes, and seven 64K bytes. Sectors can be
erased individually without affecting the data in other sectors.
Whole chip erase capabilities provide the flexibility to revise the
data in the device.
The sector protect/unprotect feature disables both program and
erase operations in any combination of the sectors of the
memory.
Elite Semiconductor Memory Technology Inc.
Publication Date: Jan. 2009
Revision:
1.2
1/25
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
