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F25L04UA-100CG 参数 Datasheet PDF下载

F25L04UA-100CG图片预览
型号: F25L04UA-100CG
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash, 512KX8, PDSO8, 0.150 INCH, LEAD FREE, SOIC-8]
分类和应用: 闪存存储内存集成电路光电二极管时钟
文件页数/大小: 25 页 / 271 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT
Read (33 MHz)
The Read instruction supports up to 33 MHz, it outputs the data
starting from the specified address location. The data output
stream is continuous through all addresses until terminated by a
low to high transition on CE . The internal address pointer will
automatically increment until the highest memory address is
reached. Once the highest memory address is reached, the
address pointer will automatically increment to the beginning
F25L04UA
(wrap-around) of the address space, i.e. for 4 Mbit density, once
the data from address location 7FFFFH had been read, the next
output will be from address location 00000H.
The Read instruction is initiated by executing an 8-bit command,
03H, followed by address bits [A
23
-A
0
]. CE must remain active
low for the duration of the Read cycle. See Figure 4 for the Read
sequence.
CE
MODE3
SCK MODE1
1 2 3 4 5 6 7 8
15 16
23 24
31 32
39 40
47 48
55 56
63 64
70
SI
MSB
03
ADD.
MSB
ADD.
ADD.
SO
HIGH IMPENANCE
MSB
N
D
OUT
N+1
D
OUT
N+2
D
OUT
N+3
D
OUT
N+4
D
OUT
Figure 4 : READ SEQUENCE
Elite Semiconductor Memory Technology Inc.
Publication Date: Jan. 2009
Revision:
1.2
8/25