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F25L04UA-75CG 参数 Datasheet PDF下载

F25L04UA-75CG图片预览
型号: F25L04UA-75CG
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash, 512KX8, PDSO8, 0.150 INCH, LEAD FREE, SOIC-8]
分类和应用: 时钟光电二极管内存集成电路
文件页数/大小: 24 页 / 392 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
F25L04UA  
Write-Enable (WREN)  
The Write-Enable (WREN) instruction sets the Write-  
Enable-Latch bit to 1 allowing Write operations to occur.  
The WREN instruction must be executed prior to any Write  
(Program/Erase) operation. CE must be driven high before the  
WREN instruction is executed.  
CE  
0 1 2 3 4 5 6 7  
MODE3  
MODE0  
SCK  
SI  
06  
MSB  
HIGH IMPENANCE  
SO  
FIGURE 11 : WRITE ENABLE (WREN) SEQUENCE  
Write-Disable (WRDI)  
The Write-Disable (WRDI) instruction resets the Write-Enable-Latch  
bit and AAI bit to 0 disabling any new Write operations from occurring.  
CE must be driven high before the WRDI instruction is executed.  
CE  
0 1 2 3 4 5 6 7  
MODE3  
MODE0  
SCK  
SI  
04  
MSB  
HIGH IMPENANCE  
SO  
Figure 12 : WRITE DISABLE (WRDI) SEQUENCE  
Enable-Write-Status-Register (EWSR)  
The Enable-Write-Status-Register (EWSR) instruction arms the  
Write-Status-Register (WRSR) instruction and opens the status  
register for alteration. The Enable-Write-Status-Register  
instruction does not have any effect and will be wasted, if it is not  
followed immediately by the Write-Status-Register (WRSR)  
instruction. CE must be driven low before the EWSR instruction  
is entered and must be driven high before the EWSR instruction  
is executed.  
Elite Semiconductor Memory Technology Inc.  
Publication Date: Sep. 2006  
Revision: 1.1 14/24