EN29LV160A
Table 7. Device Geometry Definition
Addresses
Addresses
(Word mode)
(Byte Mode)
Data
Description
27h
28h
29h
2Ah
2Bh
2Ch
2Dh
2Eh
2Fh
30h
31h
32h
33h
34h
35h
36h
37h
38h
39h
3Ah
3Bh
3Ch
4Eh
50h
52h
54h
56h
58h
5Ah
5Ch
5Eh
60h
62h
64h
66h
68h
6Ah
6Ch
6Eh
70h
72h
74h
76h
78h
0015h
0002h
0000h
0000h
0000h
0004h
0000h
0000h
0040h
0000h
0001h
0000h
0020h
0000h
0000h
0000h
0080h
0000h
001Eh
0000h
0000h
0001h
Device Size = 2^N byte
Flash Device Interface description (refer to CFI publication 100)
Max. number of byte in multi-byte write = 2^N
(00h = not supported)
Number of Erase Block Regions within device
Erase Block Region 1 Information
(refer to the CFI specification of CFI publication 100)
Erase Block Region 2 Information
Erase Block Region 3 Information
Erase Block Region 4 Information
Table 8. Primary Vendor-specific Extended Query
Adresses
Addresses
(Word Mode)
(Byte Mode)
Data
Description
Query-unique ASCII string “PRI”
40h
41h
42h
43h
44h
80h
82h
84h
86h
88h
0050h
0052h
0049h
0031h
0030h
Major version number, ASCII
Minor version number, ASCII
Address Sensitive Unlock
0 = Required, 1 = Not Required
Erase Suspend
0 = Not Supported, 1 = To Read Only, 2 = To Read & Write
Sector Protect
45h
46h
47h
48h
8Ah
8Ch
8Eh
90h
0000h
0002h
0001h
0001h
0 = Not Supported, X = Number of sectors in per group
Sector Temporary Unprotect
00 = Not Supported, 01 = Supported
Sector Protect/Unprotect scheme
01 = 29F040 mode, 02 = 29F016 mode,
03 = 29F400 mode, 04 = 29LV800A mode
Simultaneous Operation
00 = Not Supported, 01 = Supported
Burst Mode Type
00 = Not Supported, 01 = Supported
Page Mode Type
00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page
49h
92h
0004h
4Ah
4Bh
4Ch
94h
96h
98h
0000h
0000h
0000h
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
12
Rev. I, Issue Date: 2008/07/17
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
