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EN25P05-75VIP 参数 Datasheet PDF下载

EN25P05-75VIP图片预览
型号: EN25P05-75VIP
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash Memory,]
分类和应用:
文件页数/大小: 30 页 / 402 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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EN25P05
Write Enable (WREN) (06h)
The Write Enable (WREN) instruction (Figure 5) sets the Write Enable Latch (WEL) bit. The Write
Enable Latch (WEL) bit must be set prior to every Page Program (PP), Sector Erase (SE), Bulk
Erase (BE) and Write Status Register (WRSR) instruction.
The Write Enable (WREN) instruction is entered by driving Chip Select (CS#) Low, sending the
instruction code, and then driving Chip Select (CS#) High.
Figure 5. Write Enable Instruction Sequence Diagram
Write Disable (WRDI) (04h)
The Write Disable instruction (Figure 6) resets the Write Enable Latch (WEL) bit in the Status
Register to a 0. The Write Disable instruction is entered by driving Chip Select (CS#) low, shifting
the instruction code “04h” into the DI pin and then driving Chip Select (CS#) high. Note that the WEL
bit is automatically reset after Power-up and upon completion of the Write Status Register, Page
Program, Sector Erase, and Bulk Erase instructions.
Figure 6. Write Disable Instruction Sequence Diagram
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
9
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. C, Issue Date: 2008/01/17