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EM482M3244VBC-8FE 参数 Datasheet PDF下载

EM482M3244VBC-8FE图片预览
型号: EM482M3244VBC-8FE
PDF下载: 下载PDF文件 查看货源
内容描述: 256MB ( 2M × 4Bank × 32 )同步DRAM [256Mb (2M】4Bank】32) Synchronous DRAM]
分类和应用: 动态存储器
文件页数/大小: 19 页 / 1127 K
品牌: EOREX [ EOREX CORPORATION ]
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eorex  
Preliminary  
EM488M3244VBC  
Output Drive Strength  
The normal drive strength got all outputs is specified to be LV-CMOS. By setting EMRS specific parameter  
on A6 and A5, driving capability of data output drivers is selected.  
Partial Array Self Refresh  
In EMRS setting ,memory array size to be refreshed during self-refresh operation is programmable in order  
to reduce power. Data outside the defined area will not be retained during self-refresh.  
1. Command Truth Table  
CKE  
n-1  
BA0,  
BA1  
A11,  
A9~A10  
Command  
Symbol  
/CS /RAS /CAS /WE  
A10  
n
X
X
X
X
X
X
X
X
X
X
X
Ignore Command  
No Operation  
Burst Stop  
DESL  
NOP  
H
H
H
H
H
H
H
H
H
H
H
H
L
L
L
L
L
L
L
L
L
L
X
H
H
H
H
H
L
X
H
H
L
X
H
L
X
X
X
V
V
V
V
V
V
X
L
X
X
X
L
X
X
X
V
V
V
V
V
X
X
V
BSTH  
READ  
Read  
H
H
L
Read with Auto Pre-charge READA  
Write WRIT  
Write with Auto Pre-charge WRITA  
L
H
L
L
H
H
H
H
L
H
H
L
H
V
L
Bank Activate  
ACT  
PRE  
PALL  
MRS  
L
Pre-charge Select Bank  
Pre-charge All Banks  
Mode Register Set  
L
L
L
H
L
L
L
H = High level, L = Low level, X = High or Low level (Don't care), V = Valid data input  
May. 2007  
www.eorex.com  
13/19  
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